MT18LD472AG-5X MICRON [Micron Technology], MT18LD472AG-5X Datasheet - Page 14
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MT18LD472AG-5X
Manufacturer Part Number
MT18LD472AG-5X
Description
2, 4 MEG x 72 NONBUFFERED DRAM DIMMs
Manufacturer
MICRON [Micron Technology]
Datasheet
1.MT18LD472AG-5X.pdf
(30 pages)
OBSOLETE
SERIAL PRESENCE-DETECT EEPROM OPERATING CONDITIONS
(Notes: 1) (V
SERIAL PRESENCE-DETECT EEPROM AC ELECTRICAL CHARACTERISTICS
(Notes: 1) (V
2, 4 Meg x 72 Nonbuffered DRAM DIMMs
DM60.p65 – Rev. 6/98
PARAMETER/CONDITION
SUPPLY VOLTAGE
INPUT HIGH VOLTAGE: Logic 1; All inputs
INPUT LOW VOLTAGE: Logic 0; All inputs
OUTPUT LOW VOLTAGE: I
INPUT LEAKAGE CURRENT: V
OUTPUT LEAKAGE CURRENT: V
STANDBY CURRENT:
SCL = SDA = V
POWER SUPPLY CURRENT:
SCL clock frequency = 100 KHz
PARAMETER/CONDITION
SCL LOW to SDA data-out valid
Time the bus must be free before a new transition can start
Data-out hold time
SDA and SCL fall time
Data-in hold time
Start condition hold time
Clock HIGH period
Noise suppression time constant at SCL, SDA inputs
Clock LOW period
SDA and SCL rise time
SCL clock frequency
Data-in setup time
Start condition setup time
Stop condition setup time
WRITE cycle time
DD
DD
= +3.3V 0.3V)
= +3.3V 0.3V)
DD
- 0.3V; All other inputs = GND or 3.3V +10%
OUT
= 3mA
IN
= GND to V
OUT
= GND to V
DD
DD
14
NONBUFFERED DRAM DIMMs
Micron Technology, Inc., reserves the right to change products or specifications without notice.
SYMBOL
V
V
V
I
V
I
I
I
LO
SB
CC
t
t
DD
LI
t
t
t
OL
SYMBOL
HD:DAT
SU:STO
IH
HD:STA
SU:DAT
SU:STA
IL
t
t
HIGH
t
t
LOW
t
BUF
SCL
t
t
WR
DH
AA
t
t
t
R
F
I
V
DD
MIN
-1
3
–
–
–
–
–
MIN
300
250
0.3
4.7
4.7
4.7
4.7
0.7 V
0
4
4
V
DD
DD
MAX
3.6
0.4
10
10
30
MAX
300
100
100
2
3.5
+ 0.5
10
2, 4 MEG x 72
1
0.3
UNITS
UNITS
1998, Micron Technology, Inc.
KHz
mA
ms
ns
ns
ns
ns
V
V
V
V
A
A
A
s
s
s
s
s
s
s
s
s
NOTES
NOTES
28