M464S0924CT1-C1H SAMSUNG [Samsung semiconductor], M464S0924CT1-C1H Datasheet - Page 4

• Manufacturer Part Number: M464S0924CT1-C1H
• Description: 8Mx64 SDRAM SODIMM based on 8Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD
• Manufacturer: SAMSUNG [Samsung semiconductor]

ABSOLUTE MAXIMUM RATINGS
Note :
DC OPERATING CONDITIONS AND CHARACTERISTICS
Recommended operating conditions (Voltage referenced to V
CAPACITANCE
Notes :
M464S0924CT1
Voltage on any pin relative to Vss
Voltage on V
Storage temperature
Power dissipation
Short circuit current
Supply voltage
Input high voltage
Input low voltage
Output high voltage
Output low voltage
Input leakage current
Input capacitance (A
Input capacitance (RAS, CAS, WE)
Input capacitance (CKE0)
Input capacitance (CLK0)
Input capacitance (CS0)
Input capacitance (DQM0 ~ DQM7)
Data input/output capacitance (DQ0 ~ DQ63)
Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
1. V
2. V
3. Any input 0V
Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State outputs.
Parameter
IH
IL
DD
Parameter
(min) = -2.0V AC. The undershoot voltage duration is
(max) = 5.6V AC.The overshoot voltage duration is
supply relative to Vss
Parameter
0
~ A
(V
DD
V
11
IN
, BA0 ~ BA1)
= 3.3V, T
V
DDQ
.
A
Symbol
= 23 C, f = 1MHz, V
V
V
V
V
V
I
DD
OH
OL
LI
IH
IL
V
V
Symbol
Symbol
DD
IN
C
Min
-0.3
C
C
C
C
C
C
T
3.0
2.0
2.4
-10
, V
I
OUT
, V
P
-
STG
IN1
IN2
IN3
IN4
IN5
IN6
OS
D
REF
OUT
DDQ
SS
= 1.4V
= 0V, T
3ns.
3ns.
A
Typ
3.3
3.0
200 mV)
= 0 to 70 C)
0
-
-
-
Min
15
15
15
15
15
10
10
V
DDQ
-55 ~ +150
Max
-1.0 ~ 4.6
-1.0 ~ 4.6
3.6
0.8
0.4
10
-
Value
+0.3
50
4
Max
25
25
25
21
25
12
12
Rev. 0.0 April. 2000
Unit
uA
PC100 SODIMM
V
V
V
V
V
I
OH
I
OL
Unit
mA
W
V
V
Unit
Note
C
= -2mA
pF
pF
pF
pF
pF
pF
pF
= 2mA
1
2
3