M464S0924CT1-C1H SAMSUNG [Samsung semiconductor], M464S0924CT1-C1H Datasheet - Page 7

• Manufacturer Part Number: M464S0924CT1-C1H
• Description: 8Mx64 SDRAM SODIMM based on 8Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD
• Manufacturer: SAMSUNG [Samsung semiconductor]

Notes :
AC CHARACTERISTICS
REFER TO THE INDIVIDUAL COMPONENT, NOT THE WHOLE MODULE.
M464S0924CT1
CLK cycle time
CLK to valid output delay
Output data hold time
CLK high pulse width
CLK low pulse width
Input setup time
Input hold time
CLK to output in Low-Z
CLK to output in Hi-Z
1. Parameters depend on programmed CAS latency.
2. If clock rising time is longer than 1ns, (tr/2-0.5)ns should be added to the parameter.
3. Assumed input rise and fall time (tr & tf) = 1ns.
If tr & tf is longer than 1ns, transient time compensation should be considered,
i.e., [(tr + tf)/2-1]ns should be added to the parameter.
Parameter
(AC operating conditions unless otherwise noted)
CAS latency=3
CAS latency=2
CAS latency=3
CAS latency=2
CAS latency=3
CAS latency=2
CAS latency=3
CAS latency=2
Symbol
t
t
t
t
t
SAC
t
t
t
t
SHZ
SLZ
OH
CC
CH
SH
CL
SS
Min
10
10
3
3
3
3
2
1
1
-1H
1000
Max
6
6
6
6
Min
10
12
3
3
3
3
2
1
1
Rev. 0.0 April. 2000
-1L
PC100 SODIMM
1000
Max
6
7
6
7
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
Note
1,2
1
2
3
3
3
3
2