M368L3223ETM-CLCC4 SAMSUNG [Samsung semiconductor], M368L3223ETM-CLCC4 Datasheet - Page 10

no-image

M368L3223ETM-CLCC4

Manufacturer Part Number
M368L3223ETM-CLCC4
Description
DDR SDRAM Unbuffered Module
Manufacturer
SAMSUNG [Samsung semiconductor]
Datasheet
* Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap.
DDR SDRAM IDD spec table
256MB, 512MB Unbuffered DIMM
IDD6
IDD6
Symbol
Symbol
IDD4W
IDD2Q
IDD4W
IDD2P
IDD2F
IDD3P
IDD3N
IDD4R
IDD7A
IDD2Q
IDD3N
IDD4R
IDD2P
IDD2F
IDD3P
IDD7A
IDD0
IDD1
IDD5
IDD0
IDD1
IDD5
Low power
Low power
Normal
Normal
CC(DDR400@CL=3) C4(DDR400@CL=3) CC(DDR400@CL=3) C4(DDR400@CL=3)
CC(DDR400@CL=3) C4(DDR400@CL=3) CC(DDR400@CL=3) C4(DDR400@CL=3)
1440
1640
1200
2080
2120
2040
3080
1040
1480
1520
1440
2480
480
400
880
840
240
200
440
600
65
48
24
35
24
12
M368L6423ETM
M368L3223ETM
1400
1640
1200
2080
2120
2040
2920
1040
1480
1520
1440
2320
480
400
880
800
240
200
440
600
65
48
24
35
24
12
1620
1850
1350
2340
2390
2300
3470
1670
1710
1620
2790
1170
540
450
990
950
270
230
500
680
75
54
27
40
27
14
M381L6423ETM
M381L3223ETM
1580
1850
1350
2340
2390
2300
3290
1670
1710
1620
2610
1170
Rev. 1.3 August. 2003
900
270
230
500
680
540
450
990
75
54
27
40
27
14
(V
(V
DDR SDRAM
DD
DD
=2.7V, T = 10°C)
=2.7V, T = 10°C)
Unit
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
Optional
Optional
Notes
Notes

Related parts for M368L3223ETM-CLCC4