M393T6450FG0-CC SAMSUNG [Samsung semiconductor], M393T6450FG0-CC Datasheet - Page 12

• Manufacturer Part Number: M393T6450FG0-CC
• Description: DDR2 Registered SDRAM MODULE 240pin Registered Module based on 256Mb F-die 72-bit ECC
• Manufacturer: SAMSUNG [Samsung semiconductor]

Operating Current Table(1-2)
M393T6450FG(Z)0 / M393T6450FG(Z)3 / M393T6450FZA : 512MB(64Mx4 *18) Module
* IDD6 = DRAM current + standby current of PLL and Register
** Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap.
Input/Output Capacitance
* DM is internally loaded to match DQ and DQS identically.
Input capacitance, CK and CK
Input capacitance, CKE and CS
Input capacitance, Addr,RAS,CAS,WE
Input/output capacitance, DQ, DM, DQS, DQS
256MB, 512MB Registered DIMMs
IDD6*
IDD3P-S
IDD3P-F
Symbol
IDD4W
IDD2Q
IDD2P
IDD2N
IDD3N
IDD4R
IDD5B
IDD0
IDD1
IDD7
Part-Number
Parameter
Normal
(V
(DDR2-667@CL=5)
DD
=1.8V, V
(T
A
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
=0
E6
o
C, VDD= 1.9V)
Symbol
CCK
DDQ
CIO
CI1
CI2
=1.8V, T
M393T3253FG(Z)0
M393T3253FG(Z)3
Min
M393T3253FZA
A
-
-
-
-
=25
(DDR2-533@CL=4)
o
C)
2,420
2,640
1,090
1,190
1,840
3,550
3,230
3,610
5,540
1,110
784
600
D5
90
Max
11
12
12
10
M393T6453FG(Z)0
M393T6453FG(Z)3
Min
M393T6453FZA
-
-
-
-
(DDR2-400@CL=3)
Max
11
12
12
10
2,250
2,400
1,040
1,060
1,130
1,730
2,810
2,730
3,430
5,210
724
570
CC
90
Rev. 1.3 Aug. 2005
M393T6450FG(Z)0
M393T6450FG(Z)3
Min
M393T6450FZA
DDR2 SDRAM
-
-
-
-
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
Max
11
12
12
10
Notes
Units
pF