M470T2864AZ3-CLE6/D5/CC SAMSUNG [Samsung semiconductor], M470T2864AZ3-CLE6/D5/CC Datasheet
M470T2864AZ3-CLE6/D5/CC
Related parts for M470T2864AZ3-CLE6/D5/CC
M470T2864AZ3-CLE6/D5/CC Summary of contents
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SODIMM DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 1Gb A-die 68FBGA & 84FBGA with Pb-Free INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE ...
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... Electrical Characteristics & AC Timing for DDR2-667/533/400 ............................................ 15 13.1 Refresh Parameters by Device Density 13.2 Speed Bins and CL, tRCD, tRP, tRC and tRAS for Corresponding Bin 13.3 Timing Parameters by Speed Grade 14.0 Physical Dimensions : ............................................................................................................. 18 14.1 64Mbx16 based 128Mx64 Module (2 Rank) - M470T2864AZ3 14.2 64Mbx16 based 64Mx64 Module (1 Rank) - M470T6464AZ3 14.3 st.256Mbx8 based 256Mx64 Module (2 Ranks) - M470T5669AZ0 .......................................................................................... 7 ........................................................................................ 8 ...
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SODIMM Revision History Revision Month Year 1.0 July 2005 1.1 August 2005 1.2 March 2006 1.3 September 2006 1.4 March 2007 - Initial Release - Revised IDD Current Values - Revised Physical Dimensions for 2GB - Added the VddSPD values ...
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... SODIMM 1.0 DDR2 Unbuffered DIMM Ordering Information Part Number Density M470T6464AZ3-C(L)E6/D5/CC 512MB M470T2864AZ3-C(L)E6/D5/CC 1GB M470T5669AZ0-C(L)E6/D5/CC 2GB Note : 1. “Z” of Part number(11th digit) stand for Lead-free products. 2. “3” of Part number(12th digit) stand for Dummy Pad PCB products. 2.0 Features • Performance range Speed@CL3 ...
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... DQS2 Note : Connect; NC, TEST(pin 163)is for bus analysis tool and is not connected on normal memory modules. 5.0 Pin Description Pin Name Description CK0,CK1 Clock Inputs, positive line CK0,CK1 Clock Inputs, negative line CKE0,CKE1 Clock Enables RAS Row Address Strobe ...
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... DDR2 SDRAMs and is sent at the leading edge of the data window. DQS signals are complements, and timing is relative to the crosspoint of respective DQS and DQS If the module operated in single ended strobe mode, all DQS signals must be tied on the system board to VSS and DDR2 SDRAM mode registers programmed appropriately. ...
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... SODIMM 7.0 Functional Block Diagram : 7.1 1GB, 128Mx64 Module - M470T2864AZ3 (Populated as 2 rank of x16 DDR2 SDRAMs) 3Ω ODT1 ODT0 CKE1 CKE0 S1 S0 DQS0 LDQS CS LDQS DQS0 LDM DM0 DQ0 I DQ1 I/O 1 DQ2 I/O 2 DQ3 I/O 3 DQ4 I/O 4 DQ5 I/O 5 DQ6 I/O 6 DQ7 I/O 7 DQS1 UDQS UDQS DQS1 UDM DM1 ...
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... SODIMM 7.2 512MB, 64Mx64 Module - M470T6464AZ3 (Populated as 1 rank of x16 DDR2 SDRAMs) 3Ω CKE0 ODT0 S0 DQS0 DQS0 DM0 DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 DQS1 DQS1 DM1 DQ8 DQ9 DQ10 DQ11 DQ12 DQ13 DQ14 DQ15 DQS2 DQS2 DM2 DQ16 DQ17 ...
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... SODIMM 7.3 2GB, 256Mx64 Module - M470T5669AZ0 (Populated as 2 ranks of x8 DDR2 SDRAMs) 3Ω CKE1 ODT1 S1 CKE0 ODT0 S0 DQS0 DQS DQS DQS0 DM DM0 DQ0 I/O 0 DQ1 I/O 1 DQ2 I/O 2 DQ3 I/O 3 DQ4 I/O 4 DQ5 I/O 5 DQ6 I/O 6 DQ7 I/O 7 DQS1 DQS DQS DQS1 DM DM1 DQ8 I/O 8 DQ9 I/O 9 DQ10 I/O 10 DQ11 I/O 11 DQ12 I/O 12 DQ13 I/O 13 DQ14 ...
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SODIMM 8.0 Absolute Maximum DC Ratings Symbol Parameter Voltage on V pin relative Voltage on V pin relative DDQ DDQ Voltage on V pin relative DDL DDL Voltage on ...
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SODIMM 9.2 Operating Temperature Condition Symbol TOPER Operating Temperature Note : 1. Operating Temperature is the case surface temperature on the center/top side of the DRAM. For the measurement conditions, please refer to JESD51.2 standard ...
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SODIMM 10.0 IDD Specification Parameters Definition (IDD values are for full operating range of Voltage and Temperature) Symbol Operating one bank active-precharge current CK(IDD RC(IDD), t RAS = t RASmin(IDD); CKE is ...
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... SODIMM 11.0 Operating Current Table : 11.1 M470T2864AZ3 : 128Mx64 1GB Module 667@CL=5 Symbol CE6 LE6 IDD0 660 IDD1 740 IDD2P 120 64 IDD2Q 360 IDD2N 360 IDD3P-F 320 IDD3P-S 144 IDD3N 440 IDD4W 960 IDD4R 980 IDD5 1,060 IDD6 120 48 IDD7 1,580 * Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap. ...
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... IDD3N 840 IDD4W 1,600 IDD4R 1,600 IDD5 2,120 IDD6 240 96 IDD7 2,760 * Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap. 533@CL=4 400@CL=3 CD5 LD5 CCC 1,040 1,000 1,120 1,080 240 128 240 720 ...
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... Average periodic refresh interval 13.2 Speed Bins and CL, tRCD, tRP, tRC and tRAS for Corresponding Bin Speed Bin(CL - tRCD - tRP) Parameter min tCK, CL=3 tCK, CL=4 3.75 tCK, CL=5 tRCD tRP tRC tRAS Min Symbol M470T2864AZ3 CCK - CI - CIO(400/533) - CIO(667 1.8V + 0.1V 1.8V + 0.1V) DD Symbol tRFC 0 °C ≤ T ≤ 85°C ...
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SODIMM 13.3 Timing Parameters by Speed Grade (Refer to notes for informations related to this table at the bottom) Parameter DQ output access time from CK/CK DQS output access time from CK/CK CK high-level width CK low-level width CK half ...
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SODIMM Parameter Exit active power down to read command Exit active power down to read command (slow exit, lower power) CKE minimum pulse width (high and low pulse width) ODT turn-on delay ODT turn-on ODT turn-on(Power-Down mode) ODT turn-off delay ...
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... SODIMM 14.0 Physical Dimensions : 14.1 64Mbx16 based 128Mx64 Module (2 Rank) - M470T2864AZ3 1 11.40 16.25 2 FRONT SIDE 4.20 2.70 ± 0.10 1.50 ± 0.10 1.0 ± 0.05 4.00 ± 0.10 The used device is 64M x16 DDR2 SDRAM, FBGA. DDR2 SDRAM Part NO : K4T1G164QA 67. 199 47.40 63.00 a 200 67.60 mm DETAIL a BACK SIDE 4.00 ± 0.10 1.0 ± 0.05 1.80 ± 0.10 2.40 ± 0.10 4. DDR2 SDRAM Units : Millimeters 3 ...
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... SODIMM 14.2 64Mbx16 based 64Mx64 Module (1 Rank) 1 11.40 16. FRONT SIDE 4.20 1.50 ± 0.10 2.70 ± 0.10 1.0 ± 0.05 4.00 ± 0.10 The used device is 64M x16 DDR2 SDRAM, FBGA. DDR2 SDRAM Part NO : K4T1G164QA - M470T6464AZ3 67. 199 47.40 63.00 200 67.60 mm DETAIL a BACK SIDE 4.00 ± 0.10 1.0 ± 0.05 1.80 ± 0.10 2.40 ± 0.10 4. DDR2 SDRAM Units : Millimeters 3 ...
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... SODIMM 14.3 st.256Mbx8 based 256Mx64 Module (2 Ranks) 1 11.40 16. DETAIL a FRONT SIDE 4.20 1.50 ± 0.10 2.70 ± 0.10 1.0 ± 0.05 4.00 ± 0.10 The used device is st.256M x8 DDR2 SDRAM, FBGA. DDR2 SDRAM Part NO : K4T2G074QA - M470T5669AZ0 67.60 mm 199 a b 47.40 63.00 200 67.60 mm BACK SIDE 4.00 ± 0.10 1.0 ± 0.05 1.80 ± 0.10 2.40 ± 0.10 4. DDR2 SDRAM Units : Millimeters 3.8 mm max 2 ...