M391T2953BG0-CC SAMSUNG [Samsung semiconductor], M391T2953BG0-CC Datasheet - Page 17

• Manufacturer Part Number: M391T2953BG0-CC
• Description: DDR2 Unbuffered SDRAM MODULE
• Manufacturer: SAMSUNG [Samsung semiconductor]

256MB,512MB,1GB Unbuffered DIMMs
Electrical Characteristics & AC Timing for DDR2-533/400 SDRAM
Refresh Parameters by Device Density
Speed Bins and CL, tRCD, tRP, tRC and tRAS for Corresponding Bin
Timing Parameters by Speed Grade
(Refer to notes for informations related to this table at the bottom)
Refresh to active/Refresh command time
Average periodic refresh interval
Bin (CL - tRCD - tRP)
Parameter
tCK, CL=3
tCK, CL=4
tCK, CL=5
tRCD
tRP
tRC
tRAS
DQ output access time from
CK/CK
DQS output access time
from CK/CK
CK high-level width
CK low-level width
CK half period
Clock cycle time, CL=x
DQ and DM input hold time
DQ and DM input setup
time
Parameter
Speed
(0 °C < T
Parameter
CASE
< 95 °C; V
3.75
min
DDR2-533(D5)
Symbol
tAC
tDQSCK
tCH
tCL
tHP
tCK
tDH
tDS
15
15
55
40
5
-
4 - 4 - 4
DDQ
70000
max
8
8
-
min(tCL,
= 1.8V + 0.1V; V
tCH)
3750
min
0.45
0.45
-500
-450
225
100
tRFC
tREFI
DDR2-533
DDR2-400(CC)
min
15
15
55
40
5
5
-
85 °C < T
3 - 3 - 3
0 °C ≤ T
max
+500
+450
8000
0.55
0.55
Symbol
x
x
x
DD
70000
max
CASE
CASE
= 1.8V + 0.1V)
8
8
-
min(tCL,
5000
min
-600
-500
tCH)
≤ 85°C
0.45
0.45
275
150
≤ 95°C
DDR2-400
Units
ns
ns
ns
ns
ns
ns
ns
256Mb
max
+600
+500
7.8
3.9
0.55
0.55
8000
75
x
x
x
512Mb
105
7.8
3.9
Units
tCK
tCK
ps
ps
ps
ps
ps
ps
127.5
Notes
15,16,
15,16,
1Gb
20,21
7.8
3.9
24
17
17
2Gb
195
7.8
3.9
Rev. 1.2 Jan. 2005
DDR2 SDRAM
4Gb
tbd
7.8
3.9
Units
ns
µs
µs