M391T3253FG0-CC SAMSUNG [Samsung semiconductor], M391T3253FG0-CC Datasheet - Page 2

• Manufacturer Part Number: M391T3253FG0-CC
• Description: DDR2 Unbuffered SDRAM MODULE
• Manufacturer: SAMSUNG [Samsung semiconductor]

DDR2 Unbuffered DIMM Ordering Information
Note: “Z” of Part number(11th digit) stand for Lead-free products.
Note: “3” of Part number(12th digit) stand for Dummy Pad PCB products.
Features
Note: For detailed DDR2 SDRAM operation, please refer to Samsung’s Device operation & Timing diagram.
Address Configuration
256MB, 512MB Unbuffered DIMMs
• Performance range
• JEDEC standard 1.8V ± 0.1V Power Supply
• V
• 200 MHz f
• 4 Banks
• Posted CAS
• Programmable CAS Latency: 3, 4, 5
• Programmable Additive Latency: 0, 1 , 2 , 3 and 4
• Write Latency(WL) = Read Latency(RL) -1
• Burst Length: 4 , 8(Interleave/nibble sequential)
• Programmable Sequential / Interleave Burst Mode
• Bi-directional Differential Data-Strobe (Single-ended data-strobe is an optional feature)
• Off-Chip Driver(OCD) Impedance Adjustment
• On Die Termination
• Average Refresh Period 7.8us at lower than a T
• Package: 60ball FBGA - 32Mx8
• All of Lead-free products are compliant for RoHS
M378T3253FG(Z)3-CE6/D5/CC
M378T3253FG(Z)0-CE6/D5/CC
M378T6453FG(Z)3-CE6/D5/CC
M378T6453FG(Z)0-CE6/D5/CC
M391T3253FG(Z)3-CE6/D5/CC
M391T3253FG(Z)0-CE6/D5/CC
M391T6453FG(Z)3-CE6/D5/CC
M391T6453FG(Z)0-CE6/D5/CC
32Mx8(256Mb) based Module
-
CL-tRCD-tRP
Speed@CL3
Speed@CL4
Speed@CL5
DDQ
support High Temperature Self-Refresh rate enable feature
= 1.8V ± 0.1V
Organization
Part Number
CK
for 400Mb/sec/pin, 267MHz f
E6(DDR2-667)
5-5-5
400
533
667
Density
256MB
256MB
512MB
512MB
256MB
256MB
512MB
512MB
Row Address
D5(DDR2-533)
A0-A12
CK
4-4-4
400
533
-
for 533Mb/sec/pin, 333MHz f
CASE
Organization
32Mx64
32Mx64
64Mx64
64Mx64
32Mx72
32Mx72
64Mx72
64Mx72
85°C, 3.9us at 85°C < T
x64 Non ECC
CC(DDR2-400)
x72 ECC
Column Address
3-3-3
400
400
-
A0-A9
Component Composition
32Mx8(K4T56083QF)*16
32Mx8(K4T56083QF)*16
32Mx8(K4T56083QF)*18
32Mx8(K4T56083QF)*18
32Mx8(K4T56083QF)*8
32Mx8(K4T56083QF)*8
32Mx8(K4T56083QF)*9
32Mx8(K4T56083QF)*9
CK
Mbps
Mbps
Mbps
Unit
CK
CASE
for 667Mb/sec/pin
< 95 °C
Bank Address
BA0-BA1
Number of Rank
Rev. 1.3 Aug. 2005
DDR2 SDRAM
1
1
2
2
1
1
2
2
Auto Precharge
A10
Height
30mm
30mm
30mm
30mm
30mm
30mm
30mm
30mm