MT2LDT432HG-6X MICRON [Micron Technology], MT2LDT432HG-6X Datasheet - Page 10

• Manufacturer Part Number: MT2LDT432HG-6X
• Description: SMALL-OUTLINE DRAM MODULE
• Manufacturer: MICRON [Micron Technology]

4, 8 Meg x 32 DRAM SODIMMs
DM89.p65 – Rev. 12/98
EDO PAGE MODE
AC ELECTRICAL CHARACTERISTICS
(Notes: 5, 6, 7, 8, 9, 10, 11, 12, 19) (V
AC CHARACTERISTICS - EDO PAGE MODE OPTION
PARAMETER
Access time from column address
Column-address setup to CAS# precharge
Column-address hold time (referenced to RAS#)
Column-address setup time
Row-address setup time
Access time from CAS#
Column-address hold time
CAS# pulse width
CAS# LOW to “Don’t Care” during Self Refresh
CAS# hold time (CBR Refresh)
CAS# to output in Low-Z
Data output hold after next CAS# LOW
CAS# precharge time
Access time from CAS# precharge
CAS# to RAS# precharge time
CAS# hold time
CAS# setup time (CBR Refresh)
WRITE command to CAS# lead time
Data-in hold time
Data-in setup time
Output buffer turn-off delay
EDO-PAGE-MODE READ or WRITE cycle time
Access time from RAS#
RAS# to column-address delay time
Row-address hold time
RAS# pulse width
RAS# pulse width (EDO PAGE MODE)
RAS# pulse width during Self Refresh
Random READ or WRITE cycle time
RAS# to CAS# delay time
DD
= +3.3V ±0.3V)
SYMBOL
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
RASP
RASS
t
ACH
CAH
CHD
COH
CWL
RAD
RAH
t
t
CAC
CHR
CPA
t
t
OFF
RAC
RCD
ASC
ASR
CAS
t
CRP
CSH
t
RAS
t
CLZ
CSR
AA
DH
AR
CP
DS
PC
RC
10
MIN
100
12
38
15
38
20
50
50
84
11
0
0
8
8
8
0
3
8
5
5
8
8
0
0
9
9
-5
125,000
10,000
10,000
MAX
Micron Technology, Inc., reserves the right to change products or specifications without notice.
25
13
28
12
50
MIN
100
104
15
45
10
10
15
10
10
45
10
10
25
12
10
60
60
14
0
0
0
3
5
5
0
0
-6
DRAM SODIMMs
125,000
10,000
10,000
MAX
30
15
35
15
60
4, 8 MEG x 32
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
ns
ns
©1998, Micron Technology, Inc.
ADVANCE
NOTES
17, 23
25
13
18
18
15
25
14
4
4