GS82032AGT-100 GSI [GSI Technology], GS82032AGT-100 Datasheet - Page 11
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GS82032AGT-100
Manufacturer Part Number
GS82032AGT-100
Description
64K x 32 2Mb Synchronous Burst SRAM
Manufacturer
GSI [GSI Technology]
Datasheet
1.GS82032AGT-100.pdf
(22 pages)
Capacitance
(T
Note:
This parameter is sample tested.
AC Test Conditions
Notes:
1.
2.
3.
4.
Rev: 1.12 10/2004
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Control Input Capacitance
Input Capacitance
Output Capacitance
Input high level
Input low level
Input slew rate
Input reference level
Output reference level
Output load
V
SS
A
Undershoot Measurement and Timing
– 2.0 V
= 25°C, f = 1 MH
Include scope and jig capacitance.
Test conditions as specified with output loading as shown in Fig. 1 unless otherwise noted.
Output Load 2 for t
Device is deselected as defined by the Truth Table.
50%
V
V
SS
IH
Parameter
Parameter
LZ
Z
DQ
20% tKC
, V
, t
HZ
DD
, t
OLZ
= 3.3 V)
and t
Output Load 1
OHZ
VT = 1.25 V
Conditions
Fig. 1& 2
Symbol
1 V/ns
1.25 V
1.25 V
0.2 V
2.3 V
C
50Ω
C
C
OUT
IN
I
* Distributed Test Jig Capacitance
11/22
30pF
*
Test conditions
V
V
V
DD
V
DD
OUT
IN
GS82032AT-180/166/150/133/100/66/4/5/6
+- 2.0 V
Overshoot Measurement and Timing
= 3.3 V
= 0 V
50%
V
= 0 V
V
DD
IL
DQ
Output Load 2
5pF
20% tKC
*
Typ.
2.5 V
3
4
6
225Ω
225Ω
© 2000, GSI Technology
Max.
4
5
7
Unit
pF
pF
pF