GS820H32A2T-138 GSI [GSI Technology], GS820H32A2T-138 Datasheet - Page 9

• Manufacturer Part Number: GS820H32A2T-138
• Description: 64K x 32 2M Synchronous Burst SRAM
• Manufacturer: GSI [GSI Technology]

Absolute Maximum Ratings
(All voltages reference to V
Note:
Permanent damage to the device may occur if the Absolute Maximum Ratings are exceeded. Operation should be restricted to Recommended
Operating Conditions. Exposure to conditions exceeding the Absolute Maximum Ratings, for an extended period of time, may affect reliability of
this component.
Recommended Operating Conditions
Note:
1.
2.
3.
4.
Rev: 1.04 3/2000
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Supply Voltage
I/O Supply Voltage
Input High Voltage
Input Low Voltage
Ambient Temperature (Commercial Range Versions)
Ambient Temperature (Industrial Range Versions)
Unless otherwise noted, all performance specifications quoted are evaluated for worst case at both 2.75V VDDQ
and 3.6V VDDQ
This device features input buffers compatible with both 3.3V and 2.5V I/O drivers.
Most speed grades and configurations of this device are offered in both Commercial and Industrial Temperature ranges. The part number of
Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifications quoted are evaluated
for worst case in the temperature range marked on the device.
Input Under/overshoot voltage must be -2V > Vi < V
Symbol
V
T
T
I
V
V
V
V
OUT
P
BIAS
DDQ
I
STG
DD
CK
I/O
IN
IN
D
Voltage on V
Voltage in V
Voltage on Clock Input Pin
Voltage on I/O Pins
Voltage on Other Input Pins
Input Current on Any Pin
Output Current on Any I/O Pin
Package Power Dissipation
Storage Temperature
Temperature Under Bias
Parameter
3.135V (i.e. 3.3V I/O) and quoted at whichever condition is worst case.
DDQ
Description
SS
DD
)
Pins
Pins
DD
Symbol
+2V with a pulse width not to exceed 20% tKC.
V
-0.5 to V
V
-0.5 to V
V
V
DDQ
T
T
DD
IH
9/23
IL
A
A
DDQ
DD
-0.5 to V
-0.5 to 4.6
-55 to 125
-55 to 125
+0.5 ( 4.6 V max.)
-0.5 to 6
+0.5 ( 4.6 V max.)
Value
+/- 20
+/- 20
3.135
2.375
Min.
-0.3
1.5
1.7
-40
0
DD
GS820H32AT/Q-150/138/133/117/100/66
Typ.
3.3
2.5
25
25
---
---
Unit
mA
mA
o
o
W
V
V
V
V
V
C
C
V
Max.
DD
V
3.6
0.8
70
85
DD
+0.3
© 2000, Giga Semiconductor, Inc.
Unit
V
V
V
V
C
C
2.375V (i.e. 2.5V I/O)
Notes
1
2
2
3
3
E