GS820H32Q-4I GSI [GSI Technology], GS820H32Q-4I Datasheet - Page 10

• Manufacturer Part Number: GS820H32Q-4I
• Description: 64K x 32 2M Synchronous Burst SRAM
• Manufacturer: GSI [GSI Technology]

Capacitance
(T
Note: This parameter is sample tested.
Package Thermal Characteristics
Notes:
1.
2.
3.
4.
Rev: 1.03 2/2000
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Control Input Capacitance
Input Capacitance
Output Capacitance
Junction to Ambient (at 200 lfm)
Junction to Ambient (at 200 lfm)
Junction to Case (TOP)
Undershoot Measurement and Timing
A
V
=25
SS
Junction temperature is a function of SRAM power dissipation, package thermal resistance, mounting board temperature, ambient. Temper-
ature air flow, board density, and PCB thermal resistance.
SCMI G-38-87.
Average thermal resistance between die and top surface, MIL SPEC-883, Method 1012.1.
For x18 configuration, consult factory.
-2.0V
50%
V
V
o
SS
IH
C, f=1MH
Parameter
Z
, V
Rating
DD
=3.3V)
20% tKC
Symbol
C
C
OUT
C
IN
Layer Board
I
single
four
10/23
Test conditions
V
V
V
Symbol
DD
OUT
IN
R
R
R
=3.3V
=0V
=0V
JA
JA
JC
Overshoot Measurement and Timing
V
DD
+-2.0V
50%
V
V
DD
GS820H32T/Q-150/138/133/117/100/66
IL
TQFP Max
40
24
9
Typ.
3
4
6
20% tKC
QFP Max
Max.
4
5
7
TBD
TBD
TBD
© 1999, Giga Semiconductor, Inc.
Unit
pF
pF
pF
Unit
C/W
C/W
C/W
Notes
1,2,4
1,2,4
3,4
D