GS88132BD-150 GSI [GSI Technology], GS88132BD-150 Datasheet

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GS88132BD-150

Manufacturer Part Number
GS88132BD-150
Description
512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
Manufacturer
GSI [GSI Technology]
Datasheet
100-pin TQFP & 165-bump BGA
Commercial Temp
Industrial Temp
Features
• IEEE 1149.1 JTAG-compatible Boundary Scan
• 2.5 V or 3.3 V +10%/–10% core power supply
• 2.5 V or 3.3 V I/O supply
• LBO pin for Linear or Interleaved Burst mode
• Internal input resistors on mode pins allow floating mode pins
• Byte Write (BW) and/or Global Write (GW) operation
• Internal self-timed write cycle
• Automatic power-down for portable applications
• JEDEC-standard 100-lead TQFP and 165-bump BGA
• RoHS-compliant 100-lead TQFP and 165-bump BGA
Functional Description
Applications
The GS88118B(T/D)/GS88132B(T/D)/GS88136B(T/D) is a
9,437,184-bit high performance synchronous SRAM with a 2-
bit burst address counter. Although of a type originally
developed for Level 2 Cache applications supporting high
performance CPUs, the device now finds application in
synchronous SRAM applications, ranging from DSP main
store to networking chip set support.
Controls
Addresses, data I/Os, chip enable (E1, E2), address burst
control inputs (ADSP, ADSC, ADV) and write control inputs
(Bx, BW, GW) are synchronous and are controlled by a
positive-edge-triggered clock input (CK). Output enable (G)
and power down control (ZZ) are asynchronous inputs. Burst
cycles can be initiated with either ADSP or ADSC inputs. In
Burst mode, subsequent burst addresses are generated
internally and are controlled by ADV. The burst address
counter may be configured to count in either linear or
interleave order with the Linear Burst Order (LBO) input. The
Burst function need not be used. New addresses can be loaded
on every cycle with no degradation of chip performance.
Rev: 1.05 11/2005
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
packages
packages available
Flow Through
Pipeline
3-1-1-1
2-1-1-1
Curr (x32/x36)
Curr (x32/x36)
512K x 18, 256K x 32, 256K x 36
Curr (x18)
Curr (x18)
tCycle
tCycle
t
t
KQ
KQ
9Mb Sync Burst SRAMs
Paramter Synopsis
1/39
-333
250
290
200
230
2.5
3.0
4.5
4.5
GS88118B(T/D)/GS88132B(T/D)/GS88136B(T/D)
-300
Flow Through/Pipeline Reads
The function of the Data Output register can be controlled by
the user via the FT mode pin (Pin 14). Holding the FT mode
pin low places the RAM in Flow Through mode, causing
output data to bypass the Data Output Register. Holding FT
high places the RAM in Pipeline mode, activating the rising-
edge-triggered Data Output Register.
SCD Pipelined Reads
The GS88118B(T/D)/GS88132B(T/D)/GS88136B(T/D) is a
SCD (Single Cycle Deselect) pipelined synchronous SRAM.
DCD (Dual Cycle Deselect) versions are also available. SCD
SRAMs pipeline deselect commands one stage less than read
commands. SCD RAMs begin turning off their outputs
immediately after the deselect command has been captured in
the input registers.
Byte Write and Global Write
Byte write operation is performed by using Byte Write enable
(BW) input combined with one or more individual byte write
signals (Bx). In addition, Global Write (GW) is available for
writing all bytes at one time, regardless of the Byte Write
control inputs.
Sleep Mode
Low power (Sleep mode) is attained through the assertion
(High) of the ZZ signal, or by stopping the clock (CK).
Memory data is retained during Sleep mode.
Core and Interface Voltages
The GS88118B(T/D)/GS88132B(T/D)/GS88136B(T/D)
operates on a 2.5 V or 3.3 V power supply. All input are 3.3 V
and 2.5 V compatible. Separate output power (V
used to decouple output noise from the internal circuits and are
3.3 V and 2.5 V compatible.
230
265
185
210
2.5
3.3
5.0
5.0
-250
200
230
160
185
2.5
4.0
5.5
5.5
-200
170
195
140
160
3.0
5.0
6.5
6.5
-150
140
160
128
145
3.8
6.7
7.5
7.5
Unit
mA
mA
mA
mA
ns
ns
ns
ns
© 2002, GSI Technology
333 MHz–150 MHz
2.5 V or 3.3 V V
2.5 V or 3.3 V I/O
DDQ
) pins are
DD

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GS88132BD-150 Summary of contents

Page 1

... SCD (Single Cycle Deselect) pipelined synchronous SRAM. DCD (Dual Cycle Deselect) versions are also available. SCD SRAMs pipeline deselect commands one stage less than read commands. SCD RAMs begin turning off their outputs immediately after the deselect command has been captured in the input registers ...

Page 2

DDQ ...

Page 3

DDQ ...

Page 4

DQP DDQ ...

Page 5

TQFP Pin Description Symbol Type I — ...

Page 6

Bump BGA—x18 Commom I/O—Top View (Package DDQ D NC DQB V DDQ E NC DQB V DDQ F NC DQB V DDQ G ...

Page 7

Bump BGA—x32 Common I/O—Top View DDQ D DQC DQC V DDQ E DQC DQC V DDQ F DQC DQC V DDQ G DQC DQC ...

Page 8

Bump BGA—x36 Common I/O—Top View DQPC NC V DDQ D DQC DQC V DDQ E DQC DQC V DDQ F DQC DQC V DDQ G DQC DQC ...

Page 9

BGA Pin Description Symbol Type I — ...

Page 10

GS88118B(T/D)/GS88132B(T/D)/GS88136B(T/D) Block Diagram Register – LBO ADV CK ADSC ADSP Power Down ZZ Control Note: Only ...

Page 11

Mode Pin Functions Mode Name Burst Order Control Output Register Control Power Down Control Note: There is a pull-up device on the FT pin and a pull-down device on the ZZ pin, so this input pin can be unconnected and ...

Page 12

Byte Write Truth Table Function GW Read H Read H Write byte a H Write byte b H Write byte c H Write byte d H Write all bytes H Write all bytes L Notes: 1. All byte outputs are ...

Page 13

Synchronous Truth Table Address Operation Used Deselect Cycle, Power Down Deselect Cycle, Power Down Deselect Cycle, Power Down Read Cycle, Begin Burst External Read Cycle, Begin Burst External Write Cycle, Begin Burst External Read Cycle, Continue Burst Read Cycle, Continue ...

Page 14

Notes: 1. The diagram shows only supported (tested) synchronous state transitions. The diagram presumes G is tied low. 2. The upper portion of the diagram assumes active use of only the Enable (E1) and Write (B that ADSP is tied ...

Page 15

Notes: 1. The diagram shows supported (tested) synchronous state transitions plus supported transitions that depend upon the use Use of “Dummy Reads” (Read Cycles with G High) may be used to make the transition from read cycles ...

Page 16

Absolute Maximum Ratings (All voltages reference Symbol Voltage in V DDQ V I/O V Voltage on Other Input Pins IN I Input Current on Any Pin IN I Output Current on Any I/O ...

Page 17

V Range Logic Levels DDQ3 Parameter V Input High Voltage DD V Input Low Voltage DD V I/O Input High Voltage DDQ V I/O Input Low Voltage DDQ Notes: 1. The part numbers of Industrial Temperature Range versions end the ...

Page 18

Undershoot Measurement and Timing 50% V – 2 50% tKC Capacitance 2 Parameter Input Capacitance Input/Output Capacitance Note: ...

Page 19

DC Electrical Characteristics Parameter Input Leakage Current (except mode pins) ZZ Input Current Output Leakage Current Output High Voltage Output High Voltage Output Low Voltage Rev: 1.05 11/2005 Specifications cited are subject to change without notice. For latest documentation see ...

Page 20

Operating Currents Parameter Test Conditions (x32/ x36) Device Selected; All other inputs Operating ≥V or ≤ V Current IH IL Output open (x18) Standby ZZ ≥ V – 0.2 V — DD Current Device Deselected; Deselect All other inputs — ...

Page 21

AC Electrical Characteristics Parameter Clock Cycle Time Clock to Output Valid Clock to Output Invalid Pipeline Clock to Output in Low-Z Setup time Hold time Clock Cycle Time Clock to Output Valid Clock to Output Invalid Flow Through Clock to ...

Page 22

Begin Read A Cont Single Read Single Read CK ADSP tS tH ADSC tS ADV tS tH A0– Ba– tOE DQa–DQd Rev: 1.05 11/2005 Specifications cited ...

Page 23

Begin Read A Cont tKH tKH CK ADSP tS tH ADSC tS tH ADV tS tH A0– Ba– and E3 only sampled with ADSC tOE ...

Page 24

... During normal operation, ZZ must be pulled low, either by the user or by its internal pull down resistor. When ZZ is pulled high, the SRAM will enter a Power Sleep mode after 2 cycles. At this time, internal state of the SRAM is preserved. When ZZ returns to low, the SRAM operates normally after ZZ recovery time. ...

Page 25

JTAG Port Registers JTAG Pin Descriptions Pin Pin Name I/O Clocks all TAP events. All inputs are captured on the rising edge of TCK and all outputs propagate TCK Test Clock In from the falling edge of TCK. The TMS ...

Page 26

TDI TMS TCK Identification (ID) Register The ID Register is a 32-bit register that is loaded with a device and vendor specific 32-bit code when the controller is put in Capture-DR state with the IDCODE command loaded ...

Page 27

Tap Controller Instruction Set ID Register Contents Die Revision Code Bit # ...

Page 28

Test Logic Reset 1 0 Run Test Idle 0 Instruction Descriptions BYPASS When the BYPASS instruction is loaded in the Instruction Register the Bypass Register is placed between TDI and TDO. This occurs when the TAP controller is moved to ...

Page 29

Typically, the Boundary Scan Register is loaded with the desired pattern of data with the SAMPLE/PRELOAD command. Then the EXTEST command is used to output the Boundary Scan Register’s contents, in parallel, on the RAM’s data output drivers on the ...

Page 30

JTAG Port AC Test Conditions Parameter Input high level Input low level Input slew rate Input reference level Output reference level Notes: 1. Include scope and jig capacitance. 2. Test conditions as shown unless otherwise noted. JTAG TAP Instruction Set ...

Page 31

... OLJ –100 uA OHJC +100 uA OLJC TCK TDI TMS TDO Parallel SRAM input Rev: 1.05 11/2005 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. GS88118B(T/D)/GS88132B(T/D)/GS88136B(T/D) Symbol V IHJ3 V ILJ3 V IHJ2 V ILJ2 I INHJ I INLJ ...

Page 32

JTAG Port AC Electrical Characteristics Parameter Symbol TCK Cycle Time tTKC TCK Low to TDO Valid tTKQ TCK High Pulse Width tTKH TCK Low Pulse Width tTKL TDI & TMS Set Up Time tTS TDI & TMS Hold Time tTH ...

Page 33

TQFP Package Drawing (Package T) Symbol Description Min. Nom. Max A1 Standoff 0.05 A2 Body Thickness 1.35 b Lead Width 0.20 c Lead Thickness 0.09 D Terminal Dimension 21.9 D1 Package Body 19.9 E Terminal Dimension 15.9 E1 Package Body ...

Page 34

Package Dimensions—165-Bump FPBGA (Package D) A1 CORNER TOP VIEW SEATING PLANE C Rev: 1.05 ...

Page 35

Ordering Information for GSI Synchronous Burst RAMs 1 Org Part Number 512K x 18 GS88118BT-333 512K x 18 GS88118BT-300 512K x 18 GS88118BT-250 512K x 18 GS88118BT-200 512K x 18 GS88118BT-150 256K x 32 GS88136BT-333 256K x 32 GS88132BT-300 256K ...

Page 36

Ordering Information for GSI Synchronous Burst RAMs (Continued) 1 Org Part Number 256K x 36 GS88136BT-150I 512K x 18 GS88118BGT-333 512K x 18 GS88118BGT-300 512K x 18 GS88118BGT-250 512K x 18 GS88118BGT-200 512K x 18 GS88118BGT-150 256K x 32 GS88136BGT-333 ...

Page 37

... GS88118BD-250I 512K x 18 GS88118BD-200I 512K x 18 GS88118BD-150I 256K x 32 GS88132BD-333I 256K x 32 GS88132BD-300I 256K x 32 GS88132BD-250I 256K x 32 GS88132BD-200I 256K x 32 GS88132BD-150I 256K x 36 GS88136BD-333I 256K x 36 GS88136BD-300I 256K x 36 GS88136BD-250I 256K x 36 GS88136BD-200I 256K x 36 GS88136BD-150I 512K x 18 GS88118BGD-333 Notes: 1. Customers requiring delivery in Tape and Reel should add the character “ ...

Page 38

Ordering Information for GSI Synchronous Burst RAMs (Continued) 1 Org Part Number 512K x 18 GS88118BGD-300 512K x 18 GS88118BGD-250 512K x 18 GS88118BGD-200 512K x 18 GS88118BGD-150 256K x 32 GS88132BGD-333 256K x 32 GS88132BGD-300 256K x 32 GS88132BGD-250 ...

Page 39

... Sync SRAM Datasheet Revision History DS/DateRev. Code: Old; Types of Changes New Format or Content 88118B_r1 88118B_r1; 88118B_r1_01 88118B_r1_01; 88118B_r1_02 88118B_r1_02; 88118B_r1_03 88118B_r1_03; 88118B_r1_04 88118B_r1_04; 88118B_r1_05 Rev: 1.05 11/2005 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. GS88118B(T/D)/GS88132B(T/D)/GS88136B(T/D) • ...

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