GS8321Z18E GSI [GSI Technology], GS8321Z18E Datasheet

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GS8321Z18E

Manufacturer Part Number
GS8321Z18E
Description
36Mb Pipelined and Flow Through Synchronous NBT SRAMs
Manufacturer
GSI [GSI Technology]
Datasheet
165-Bump FP-BGA
Commercial Temp
Industrial Temp
Features
• User-configurable Pipeline and Flow Through mode
• NBT (No Bus Turn Around) functionality allows zero wait
• Fully pin-compatible with both pipelined and flow through
• IEEE 1149.1 JTAG-compatible Boundary Scan
• 2.5 V or 3.3 V +10%/–10% core power supply
• LBO pin for Linear or Interleave Burst mode
• Pin-compatible with 2Mb, 4Mb, 8Mb, and 18Mb devices
• Byte write operation (9-bit Bytes)
• 3 chip enable signals for easy depth expansion
• ZZ pin for automatic power-down
• JEDEC-standard 165-bump FP-BGA package
• Pb-Free 165-bump BGA package available
Functional Description
The GS8321Z18/32/36E is a 36Mbit Synchronous Static
SRAM. GSI's NBT SRAMs, like ZBT, NtRAM, NoBL or
other pipelined read/double late write or flow through read/
single late write SRAMs, allow utilization of all available bus
bandwidth by eliminating the need to insert deselect cycles
when the device is switched from read to write cycles.
Rev: 1.06b 2/2006
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
read-write-read bus utilization
NtRAM™, NoBL™ and ZBT™ SRAMs
Through
Pipeline
3-1-1-1
2-1-1-1
36Mb Pipelined and Flow Through
Flow
Synchronous NBT SRAM
Curr
Curr
Curr
Curr
tCycle
tCycle
t
t
(x32/x36)
(x32/x36)
KQ
KQ
(x18)
(x18)
Parameter Synopsis
1/34
-250 -225 -200 -166 -150 -133 Unit
285
350
205
235
2.5
4.0
6.5
6.5
265
320
195
225
2.7
4.4
7.0
7.0
Because it is a synchronous device, address, data inputs, and
read/ write control inputs are captured on the rising edge of the
input clock. Burst order control (LBO) must be tied to a power
rail for proper operation. Asynchronous inputs include the
Sleep mode enable, ZZ and Output Enable. Output Enable can
be used to override the synchronous control of the output
drivers and turn the RAM's output drivers off at any time.
Write cycles are internally self-timed and initiated by the rising
edge of the clock input. This feature eliminates complex off-
chip write pulse generation required by asynchronous SRAMs
and simplifies input signal timing.
The GS8321Z18/32/36E may be configured by the user to
operate in Pipeline or Flow Through mode. Operating as a
pipelined synchronous device, in addition to the rising-edge-
triggered registers that capture input signals, the device
incorporates a rising-edge-triggered output register. For read
cycles, pipelined SRAM output data is temporarily stored by
the edge triggered output register during the access cycle and
then released to the output drivers at the next rising edge of
clock.
The GS8321Z18/32/36E is implemented with GSI's high
performance CMOS technology and is available in JEDEC-
standard 165-bump FP-BGA package.
245
295
185
210
3.0
5.0
7.5
7.5
GS8321Z18/32/36E-250/225/200/166/150/133
220
260
175
200
3.5
6.0
8.0
8.0
210
240
165
190
3.8
6.6
8.5
8.5
185
215
155
175
4.0
7.5
8.5
8.5
mA
mA
mA
mA
ns
ns
ns
ns
© 2003, GSI Technology
250 MHz–133 MHz
2.5 V or 3.3 V V
2.5 V or 3.3 V I/O
DD

Related parts for GS8321Z18E

GS8321Z18E Summary of contents

Page 1

... The GS8321Z18/32/36E is a 36Mbit Synchronous Static SRAM. GSI's NBT SRAMs, like ZBT, NtRAM, NoBL or other pipelined read/double late write or flow through read/ single late write SRAMs, allow utilization of all available bus bandwidth by eliminating the need to insert deselect cycles when the device is switched from read to write cycles. ...

Page 2

Bump BGA—x18 Commom I/O—Top View (Package DDQ D NC DQB V DDQ E NC DQB V DDQ F NC DQB V DDQ G ...

Page 3

Bump BGA—x32 Common I/O—Top View (Package DDQ D DQC DQC V DDQ E DQC DQC V DDQ F DQC DQC V DDQ G ...

Page 4

Bump BGA—x36 Common I/O—Top View (Package DQC NC V DDQ D DQC DQC V DDQ E DQC DQC V DDQ F DQC DQC V DDQ G ...

Page 5

GS8321Z18/32/36E 165-Bump BGA Pin Description Symbol Type I — ...

Page 6

... GS8321Z18/32/36 NBT SRAM Functional Block Diagram Rev: 1.06b 2/2006 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. GS8321Z18/32/36E-250/225/200/166/150/133 Amps Sense Drivers Write 6/34 © 2003, GSI Technology ...

Page 7

... B C with no Byte Write inputs active is a no-op cycle. The pipelined NBT SRAM provides double late write functionality, matching the write command versus data pipeline length (2 cycles) to the read command versus data pipeline length (2 cycles). At the first rising edge of clock, Enable, Write, Byte Write(s), and Address are registered. The Data In associated with that address is required at the third rising edge of clock ...

Page 8

... Dummy Read and Write abort can be considered NOPs because the SRAM performs no operation. A Write abort occurs when the W pin is sampled low but no Byte Write pins are active so no write operation is performed can be wired low to minimize the number of control signals provided to the SRAM. Output drivers will automatically turn off during write cycles. 4. ...

Page 9

Pipelined and Flow Through Read Write Control State Diagram New Read R R Burst Read B Key Input Command Code ƒ Transition Current State (n) Next State (n+1) n Clock (CK) Command Current State Current State and Next State Definition ...

Page 10

Intermediate B W High Z (Data In) Key Input Command Code ƒ Transition Current State (n) Intermediate State (N+1) Clock (CK) Command Current State and Next State Definition for Rev: 1.06b 2/2006 Specifications cited are subject to change without notice. ...

Page 11

B W High Z (Data In) Key Input Command Code ƒ Transition Current State (n) Clock (CK) Command Current State and Next State Definition for: Rev: 1.06b 2/2006 Specifications cited are subject to change without notice. For latest documentation see ...

Page 12

... SRAM to advance the internal address counter and use the counter generated address to read or write the SRAM. The starting address for the first cycle in a burst cycle series is loaded into the SRAM by driving the ADV pin low, into Load mode ...

Page 13

... During normal operation, ZZ must be pulled low, either by the user or by it’s internal pull down resistor. When ZZ is pulled high, the SRAM will enter a Power Sleep mode after 2 cycles. At this time, internal state of the SRAM is preserved. When ZZ returns to low, the SRAM operates normally after ZZ recovery time. ...

Page 14

Absolute Maximum Ratings (All voltages reference Symbol Voltage in V DDQ V I/O V Voltage on Other Input Pins IN I Input Current on Any Pin IN I Output Current on Any I/O ...

Page 15

V Range Logic Levels DDQ3 Parameter V Input High Voltage DD V Input Low Voltage DD V I/O Input High Voltage DDQ V I/O Input Low Voltage DDQ Notes: 1. The part numbers of Industrial Temperature Range versions end the ...

Page 16

Undershoot Measurement and Timing 50% V – 2 20% tKC Capacitance 2 Parameter Input Capacitance Input/Output Capacitance Note: ...

Page 17

DC Electrical Characteristics Parameter Input Leakage Current (except mode pins) ZZ Input Current FT Input Current Output Leakage Current Output High Voltage Output High Voltage Output Low Voltage Rev: 1.06b 2/2006 Specifications cited are subject to change without notice. For ...

Page 18

Rev: 1.06b 2/2006 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. GS8321Z18/32/36E-250/225/200/166/150/133 18/34 © 2003, GSI Technology ...

Page 19

AC Electrical Characteristics Parameter Symbol Clock Cycle Time Clock to Output Valid Clock to Output Invalid Pipeline Clock to Output in Low-Z Setup time Hold time Clock Cycle Time Clock to Output Valid Clock to Output Invalid Flow Through Clock ...

Page 20

Write A Read CKE ADV Rev: 1.06b 2/2006 Specifications cited are subject to change without notice. For latest documentation ...

Page 21

Write A Write CKE ADV A0– D(A) G *Note High(False ...

Page 22

JTAG Pin Descriptions Pin Pin Name I/O Clocks all TAP events. All inputs are captured on the rising edge of TCK and all outputs propagate TCK Test Clock In from the falling edge of TCK. The TMS input is sampled ...

Page 23

TDI TMS TCK Identification (ID) Register The ID Register is a 32-bit register that is loaded with a device and vendor specific 32-bit code when the controller is put in Capture-DR state with the IDCODE command loaded ...

Page 24

Tap Controller Instruction Set Overview There are two classes of instructions defined in the Standard 1149.1-1990; the standard (Public) instructions, and device specific (Private) instructions. Some Public instructions are mandatory for 1149.1 compliance. Optional Public instructions must be implemented in ...

Page 25

SAMPLE/PRELOAD SAMPLE/PRELOAD is a Standard 1149.1 mandatory public instruction. When the SAMPLE / PRELOAD instruction is loaded in the Instruction Register, moving the TAP controller into the Capture-DR state loads the data in the RAMs input and I/O buffers into ...

Page 26

JTAG TAP Instruction Set Summary Instruction Code EXTEST 000 Places the Boundary Scan Register between TDI and TDO. IDCODE 001 Preloads ID Register and places it between TDI and TDO. Captures I/O ring contents. Places the Boundary Scan Register between ...

Page 27

JTAG Port Recommended Operating Conditions and DC Characteristics Parameter 3.3 V Test Port Input High Voltage 3.3 V Test Port Input Low Voltage 2.5 V Test Port Input High Voltage 2.5 V Test Port Input Low Voltage TMS, TCK and ...

Page 28

... TCK TDI TMS TDO Parallel SRAM input JTAG Port AC Electrical Characteristics Parameter Symbol TCK Cycle Time tTKC TCK Low to TDO Valid tTKQ TCK High Pulse Width tTKH TCK Low Pulse Width tTKL TDI & TMS Set Up Time tTS TDI & TMS Hold Time ...

Page 29

Package Dimensions—165-Bump FPBGA (Package E; Variation 1) A1 TOP VIEW SEATING PLANE C ...

Page 30

... GS8321Z36E-225 GS8321Z36E-200 GS8321Z36E-166 GS8321Z36E-150 GS8321Z36E-133 GS8321Z18E-250I GS8321Z18E-225I GS8321Z18E-200I GS8321Z18E-166I Notes: 1. Customers requiring delivery in Tape and Reel should add the character “T” to the end of the part number. Example: GS8321Z36E-166IT. 2. The speed column indicates the cycle frequency (MHz) of the device in Pipeline mode and the latency (ns) in Flow Through mode. Each device is Pipeline/Flow through mode-selectable by the user ...

Page 31

... Ordering Information—GSI NBT Synchronous SRAM 1 Org Part Number GS8321Z18E-150I GS8321Z18E-133I GS8321Z32E-250I GS8321Z32E-225I GS8321Z32E-200I GS8321Z32E-166I GS8321Z32E-150I GS8321Z32E-133I GS8321Z36E-250I GS8321Z36E-225I GS8321Z36E-200I GS8321Z36E-166I GS8321Z36E-150I GS8321Z36E-133I GS8321Z18GE-250 GS8321Z18GE-250 ...

Page 32

... Ordering Information—GSI NBT Synchronous SRAM 1 Org Part Number GS8321Z32GE-166 GS8321Z32GE-150 GS8321Z32GE-133 GS8321Z36GE-250 GS8321Z36GE-225 GS8321Z36GE-200 GS8321Z36GE-166 GS8321Z36GE-150 GS8321Z36GE-133 GS8321Z18GE-250I GS8321Z18GE-225I GS8321Z18GE-200I GS8321Z18GE-166I GS8321Z18GE-150I GS8321Z18GE-133I GS8321Z32GE-250I ...

Page 33

... Ordering Information—GSI NBT Synchronous SRAM 1 Org Part Number GS8321Z32E-200I GS8321Z32E-166I GS8321Z32E-150I GS8321Z32E-133I GS8321Z36E-250I GS8321Z36E-225I GS8321Z36E-200I GS8321Z36E-166I GS8321Z36E-150I GS8321Z36E-133I Notes: 1. Customers requiring delivery in Tape and Reel should add the character “T” to the end of the part number. Example: GS8321Z36E-166IT. ...

Page 34

... Sync SRAM Data Sheet Revision History DS/DateRev. Code: Old; Types of Changes New Format or Content 8321Zxx_r1 8321Zxx_r1; 8321Zxx_r1_01 8321Zxx_r1_01; 8321Zxx_r1_02 8321Zxx_r1_02; 8321Zxx_r1_03 8321Zxx_r1_03; 8321Zxx_r1_04 8321Zxx_r1_04; 8321Zxx_r1_05 8321Zxx_r1_05; 8321Zxx_r1_06 8321Zxx_r1_06; 8321Zxx_r1_06 Rev: 1.06b 2/2006 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. ...

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