HYS64V16302GU INFINEON [Infineon Technologies AG], HYS64V16302GU Datasheet - Page 6

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HYS64V16302GU

Manufacturer Part Number
HYS64V16302GU
Description
Manufacturer
INFINEON [Infineon Technologies AG]
Datasheet
INFINEON Technologies
Operating Currents per SDRAM component
T
Operating current
t
Outputs open, Burst Length = 4, CL=3
All banks operated in random access,
all banks operated in ping-pong
manner to maximize gapless data
access
Precharge standby current
in Power Down Mode
CS =
Precharge stand-by current
in Non Power Down Mode
CS =
No operating current
t
active state (max. 4 banks)
Burst Operating Current
t
Read command cycling
Auto Refresh Current
t
Auto Refresh command cycling
Self Refresh Current
Self Refresh Mode
CKE = 0.2 V
RC
CK
CK
CK
Parameter
1. All values are shown per one SDRAM component.
2. These parameters depend on the cycle rate. These values are measured at 133 MHz operation
3. These parameters are measured with continuous data stream during read access and all DQ
A
= 0 to 70 C,
=
= min., CS =
= min
= min
frequency for-7 & -7.5 and at 100 MHz for -8 modules.
Input signals are changed once during
t
toggling. CL = 3 and BL = 4 are assumed and th data-out current is excluded.
CK
t
V
V
RC(MIN.)
= infinity.
IH (MIN.)
IH (MIN.)
,
, CKE
, CKE
t
CK
V
V
=
DD
IH (MIN.)
t
CK(MIN.)
= 3.3 V
V
V
IL(MAX.)
IH(MIN.)
,
0.3 V
Test Condition Symbol -7.5
t
t
CKE
CKE
CK
CK
t
= min
= min
CK
, excepts for
V
V
6
IH(MIN.)
IL(MAX.)
I
I
I
I
I
I
I
I
CC1
CC2P
CC2N
CC3N
CC3P
CC4
CC5
CC6
I
CC6
and for stand-by currents when
230
2
40
50
10
170
150
3
max.
HYS 64V16302GU
SDRAM-Modules
-8
170
2
30
45
10
120
100
3
Unit Note
mA
mA
mA
mA
mA
mA
mA
mA
1)
1)
1)
1)
1)
1, 2)
1)
1)
9.01

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