HYS64V4200GU-10 SIEMENS [Siemens Semiconductor Group], HYS64V4200GU-10 Datasheet - Page 2
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HYS64V4200GU-10
Manufacturer Part Number
HYS64V4200GU-10
Description
3.3V 4M x 64/72-Bit 1 BANK SDRAM Module 3.3V 8M x 64/72-Bit 2 BANK SDRAM Module
Manufacturer
SIEMENS [Siemens Semiconductor Group]
Datasheet
1.HYS64V4200GU-10.pdf
(15 pages)
The HYS64(72)V4200 and HYB64(72)V8220 are an industry standard 168-pin 8-byte Dual in-line Memory Module
(DIMM) which are organised as 4M x 64, 4M x 72 in an one bank and 8M x 64, 8M x72 in two banks high speed
memory arrays designed with 64Mbit Synchronous DRAMs (SDRAMs Die Rev.B) for non-parity and ECC
application. The DIMMs use -8 and -8B speed sort 4M x 16 SDRAM devices in TSOP54 packages to meet the
PC100 requirements and -10 parts for 66 MHz bus speed applications. Decoupling capacitors are mounted on the
PC board. The PC board design is according to INTEL’s module specification.
The DIMMs have a serial presence detect, implemented with a serial E
first 128 bytes are utilized by the DIMM manufacturer and the second 128 bytes are available to the end user.
All SIEMENS 168-pin DIMMs provide a high performance, flexible 8-byte interface in a 133,35 mm long footprint,
with t.d.b. height.
Ordering Information
Type
HYS 64V4200GU-8
HYS 72V4200GU-8
HYS 64V8220GU-8
HYS 64V8220GU-8
HYS 64V4200GU-8B
HYS 64V8220GU-8B
HYS 64V4200GU-10
HYS 72V4200GU-10
HYS 64V8220GU-10
HYS 64V8220GU-10
Pin Names
Address Format:
Semiconductor Group
4M x 64
4M x 72
8M x 64
8M x 72
CKE0, CKE1
DQ0 - DQ63
BA0 , BA1
CB0-CB7
A0-A11
RAS
CAS
WE
HYS64V4200GU
HYS72V4200GU
HYS64V8220GU
HYS72V8220GU
Part Number
Address Inputs
(RA0~ RA11 / CA0 ~ CA7, CA10)
Bank Select
Data Input/Output
Check Bits (x 72 organisation
only)
Row Address Strobe
Column Address Strobe
Read / Write Input
Clock Enable
Ordering Code
PC100-222-620
PC100-222-620
PC100-222-620
PC100-222-620
PC100-323-620
PC100-323-620
PC66-222-620
PC66-222-620
PC66-222-620
PC66-222-620
Rows
12
12
12
12
Package
L-DIM-168-31
L-DIM-168-31
L-DIM-168-31
L-DIM-168-31
L-DIM-168-31
L-DIM-168-31
L-DIM-168-31
L-DIM-168-31
L-DIM-168-31
L-DIM-168-31
Columns
8
8
8
8
DQMB0 - DQMB7 Data Mask
2
CLK0 - CLK3
CS0 - CS3
Bank Select
Descriptions
N.C. / DU
100 Mhz 4M x 64 1 bank SDRAM module
100 Mhz 8M x 64 2 bank SDRAM module
100 Mhz 4M x 64 1 bank SDRAM module
100 Mhz 8M x 64 2 bank SDRAM module
100 MHz 4M x 72 1 bank SDRAM module
100 MHz 8M x 72 2 bank SDRAM module
66 MHz 4M x 72 1 bank SDRAM module
SDA
66 Mhz 4M x 64 1 bank SDRAM module
66 Mhz 8M x 64 2 bank SDRAM module
66 MHz 8M x 72 2 bank SDRAM module
SCL
Vcc
Vss
2
2
2
2
2
PROM using the two pin I
HYS64(72)V4200/8220GU
Clock Input
Chip Select
Power (+3.3 Volt)
Ground
Clock for Presence Detect
Serial Data Out for Pres. Detect
No Connection
Refresh
4k
4k
4k
4k
SDRAM-Modules
Period
64 ms
64 ms
64 ms
64 ms
2
C protocol. The
Module
Height
Interval
15,6 s
15,6 s
15,6 s
15,6 s
1,15”
1,15”
1,15”
1,15”
1,15”
1,15”
1,15”
1,15”
1,15”
1,15”