GS881Z18AT GSI [GSI Technology], GS881Z18AT Datasheet

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GS881Z18AT

Manufacturer Part Number
GS881Z18AT
Description
9Mb Pipelined and Flow Through Synchronous NBT SRAM
Manufacturer
GSI [GSI Technology]
Datasheet
100-Pin TQFP
Commercial Temp
Industrial Temp
Features
• User-configurable Pipeline and Flow Through mode
• NBT (No Bus Turn Around) functionality allows zero wait
• Fully pin-compatible with both pipelined and flow through
• IEEE 1149.1 JTAG-compatible Boundary Scan
• On-chip write parity checking; even or odd selectable
• 2.5 V or 3.3 V +10%/–10% core power supply
• 2.5 V or 3.3 V I/O supply
• LBO pin for Linear or Interleave Burst mode
• Pin-compatible with 2M, 4M, and 8M devices
• Byte write operation (9-bit Bytes)
• 3 chip enable signals for easy depth expansion
• ZZ pin for automatic power-down
• JEDEC-standard 100-lead TQFP package
Functional Description
The GS881Z18/36AT is a 9Mbit Synchronous Static SRAM.
GSI's NBT SRAMs, like ZBT, NtRAM, NoBL or other
pipelined read/double late write or flow through read/single
late write SRAMs, allow utilization of all available bus
bandwidth by eliminating the need to insert deselect cycles
when the device is switched from read to write cycles.
Rev: 1.03 11/2004
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
read-write-read bus utilization
NtRAM™, NoBL™ and ZBT™ SRAMs
Through
Pipeline
3-1-1-1
2-1-1-1
3.3 V
2.5 V
3.3 V
2.5 V
Flow
9Mb Pipelined and Flow Through
Synchronous NBT SRAM
Curr (x18)
Curr (x36)
Curr (x18)
Curr (x36)
Curr (x18)
Curr (x36)
Curr (x18)
Curr (x36)
tCycle
tCycle
t
t
KQ
KQ
Parameter Synopsis
-250 -225 -200 -166 -150 -133 Unit
280
330
275
320
175
200
175
200
2.5
4.0
5.5
5.5
1/31
255
300
250
295
165
190
165
190
2.7
4.4
6.0
6.0
Because it is a synchronous device, address, data inputs, and
read/ write control inputs are captured on the rising edge of the
input clock. Burst order control (LBO) must be tied to a power
rail for proper operation. Asynchronous inputs include the
Sleep mode enable, ZZ and Output Enable. Output Enable can
be used to override the synchronous control of the output
drivers and turn the RAM's output drivers off at any time.
Write cycles are internally self-timed and initiated by the rising
edge of the clock input. This feature eliminates complex off-
chip write pulse generation required by asynchronous SRAMs
and simplifies input signal timing.
The GS881Z18/36AT may be configured by the user to
operate in Pipeline or Flow Through mode. Operating as a
pipelined synchronous device, in addition to the rising-edge-
triggered registers that capture input signals, the device
incorporates a rising-edge-triggered output register. For read
cycles, pipelined SRAM output data is temporarily stored by
the edge triggered output register during the access cycle and
then released to the output drivers at the next rising edge of
clock.
The GS881Z18/36AT is implemented with GSI's high
performance CMOS technology and is available in a JEDEC-
standard 100-pin TQFP package.
230
270
230
265
160
180
160
180
3.0
5.0
6.5
6.5
200
230
195
225
150
170
150
170
3.4
6.0
7.0
7.0
GS881Z18/36AT-250/225/200/166/150/133
185
215
180
210
145
165
145
165
3.8
6.7
7.5
7.5
165
190
165
185
135
150
135
150
4.0
7.5
8.5
8.5
mA
mA
mA
mA
mA
mA
mA
mA
ns
ns
ns
ns
© 2001, GSI Technology
250 MHz–133 MHz
2.5 V or 3.3 V V
2.5 V or 3.3 V I/O
DD

Related parts for GS881Z18AT

GS881Z18AT Summary of contents

Page 1

... For read cycles, pipelined SRAM output data is temporarily stored by the edge triggered output register during the access cycle and then released to the output drivers at the next rising edge of clock ...

Page 2

... DDQ Rev: 1.03 11/2004 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. GS881Z18/36AT-250/225/200/166/150/133 GS881Z18AT Pinout (Package T) 512K x 18 Top View 2/ ...

Page 3

DQP DDQ ...

Page 4

TQFP Pin Descriptions Symbol Type ...

Page 5

... GS881Z18/36A NBT SRAM Functional Block Diagram Rev: 1.03 11/2004 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. GS881Z18/36AT-250/225/200/166/150/133 Amps Sense Drivers Write 5/31 © 2001, GSI Technology ...

Page 6

... B C with no Byte Write inputs active is a no-op cycle. The pipelined NBT SRAM provides double late write functionality, matching the write command versus data pipeline length (2 cycles) to the read command versus data pipeline length (2 cycles). At the first rising edge of clock, Enable, Write, Byte Write(s), and Address are registered. The Data In associated with that address is required at the third rising edge of clock ...

Page 7

... Dummy Read and Write abort can be considered NOPs because the SRAM performs no operation. A Write abort occurs when the W pin is sampled low but no Byte Write pins are active so no write operation is performed can be wired low to minimize the number of control signals provided to the SRAM. Output drivers will automatically turn off during write cycles. 4. ...

Page 8

Pipelined and Flow Through Read Write Control State Diagram New Read R R Burst Read B Key Input Command Code ƒ Transition Current State (n) Next State (n+1) n Clock (CK) Command Current State Current State and Next State Definition ...

Page 9

Intermediate B W High Z (Data In) Key Input Command Code ƒ Transition Current State (n) Intermediate State (N+1) Clock (CK) Command Current State and Next State Definition for Rev: 1.03 11/2004 Specifications cited are subject to change without notice. ...

Page 10

B W High Z (Data In) Key Input Command Code ƒ Transition Current State (n) Clock (CK) Command Current State and Next State Definition for: Rev: 1.03 11/2004 Specifications cited are subject to change without notice. For latest documentation see ...

Page 11

... SRAM to advance the internal address counter and use the counter generated address to read or write the SRAM. The starting address for the first cycle in a burst cycle series is loaded into the SRAM by driving the ADV pin low, into Load mode ...

Page 12

... During normal operation, ZZ must be pulled low, either by the user or by it’s internal pull down resistor. When ZZ is pulled high, the SRAM will enter a Power Sleep mode after 2 cycles. At this time, internal state of the SRAM is preserved. When ZZ returns to low, the SRAM operates normally after ZZ recovery time. ...

Page 13

Absolute Maximum Ratings (All voltages reference Symbol DDQ V I/O V Voltage on Other Input Pins IN I Input Current on Any Pin IN I Output Current on Any I/O Pin OUT P ...

Page 14

V Range Logic Levels DDQ3 Parameter V Input High Voltage DD V Input Low Voltage DD V I/O Input High Voltage DDQ V I/O Input Low Voltage DDQ Notes: 1. The part numbers of Industrial Temperature Range versions end the ...

Page 15

Undershoot Measurement and Timing 50% V – 2 50% tKC Capacitance 2 Parameter Input Capacitance Input/Output Capacitance Note: ...

Page 16

DC Electrical Characteristics Parameter Input Leakage Current (except mode pins) ZZ Input Current FT Input Current Output Leakage Current Output High Voltage Output High Voltage Output Low Voltage Rev: 1.03 11/2004 Specifications cited are subject to change without notice. For ...

Page 17

Rev: 1.03 11/2004 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. GS881Z18/36AT-250/225/200/166/150/133 17/31 © 2001, GSI Technology ...

Page 18

AC Electrical Characteristics Parameter Symbol Clock Cycle Time Clock to Output Valid Clock to Output Invalid Pipeline Clock to Output in Low-Z Setup time Hold time Clock Cycle Time Clock to Output Valid Clock to Output Invalid Flow Through Clock ...

Page 19

Write A Read CKE ADV Rev: 1.03 11/2004 Specifications cited are subject to change without notice. For latest documentation ...

Page 20

Write A Write CKE ADV A0– D(A) G *Note High(False ...

Page 21

JTAG Port Registers JTAG Pin Descriptions Pin Pin Name I/O Clocks all TAP events. All inputs are captured on the rising edge of TCK and all outputs propagate TCK Test Clock In from the falling edge of TCK. The TMS ...

Page 22

TDI TMS TCK Identification (ID) Register The ID Register is a 32-bit register that is loaded with a device and vendor specific 32-bit code when the controller is put in Capture-DR state with the IDCODE command loaded ...

Page 23

Tap Controller Instruction Set ID Register Contents Die Revision Code Bit # ...

Page 24

Test Logic Reset 1 0 Run Test Idle 0 Instruction Descriptions BYPASS When the BYPASS instruction is loaded in the Instruction Register the Bypass Register is placed between TDI and TDO. This occurs when the TAP controller is moved to ...

Page 25

Typically, the Boundary Scan Register is loaded with the desired pattern of data with the SAMPLE/PRELOAD command. Then the EXTEST command is used to output the Boundary Scan Register’s contents, in parallel, on the RAM’s data output drivers on the ...

Page 26

JTAG Port AC Test Conditions Parameter Input high level Input low level Input slew rate Input reference level Output reference level Notes: 1. Include scope and jig capacitance. 2. Test conditions as shown unless otherwise noted. JTAG TAP Instruction Set ...

Page 27

... OHJ OLJ –100 uA OHJC +100 uA OHJC TCK TDI TMS TDO Parallel SRAM input Rev: 1.03 11/2004 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. GS881Z18/36AT-250/225/200/166/150/133 Symbol V IHJ3 V ILJ3 V IHJ V ILJ I INHJ I INLJ I ...

Page 28

JTAG Port AC Electrical Characteristics Parameter Symbol TCK Cycle Time tTKC TCK Low to TDO Valid tTKQ TCK High Pulse Width tTKH TCK Low Pulse Width tTKL TDI & TMS Set Up Time tTS TDI & TMS Hold Time tTH ...

Page 29

TQFP Package Drawing (Package T) Symbol Description Min. Nom. Max A1 Standoff 0.05 A2 Body Thickness 1.35 b Lead Width 0.20 c Lead Thickness 0.09 D Terminal Dimension 21.9 D1 Package Body 19.9 E Terminal Dimension 15.9 E1 Package Body ...

Page 30

... GS881Z36AT-200 256K x 36 GS881Z36AT-166 256K x 36 GS881Z36AT-150 256K x 36 GS881Z36AT-133 512K x 18 GS881Z18AT-250I 512K x 18 GS881Z18AT-225I 512K x 18 GS881Z18AT-200I 512K x 18 GS881Z18AT-166I 512K x 18 GS881Z18AT-150I 512K x 18 GS881Z18AT-133I 256K x 36 GS881Z36AT-250I 256K x 36 GS881Z36AT-225I 256K x 36 GS881Z36AT-200I 256K x 36 ...

Page 31

... Sync SRAM Datasheet Revision History DS/DateRev. Code: Old; Types of Changes New Format or Content 881Z18A_r1 881Z18A_r1; 881Z18A_r1_01 881Z18A_r1_01; 881Z18A_r1_02 881Z18A_r1_02; 881Z18A_r1_03 Rev: 1.03 11/2004 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. GS881Z18/36AT-250/225/200/166/150/133 Page;Revisions;Reason • Creation of new datasheet • ...

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