HFD1N80 SEMIHOW [SemiHow Co.,Ltd.], HFD1N80 Datasheet - Page 3

• Manufacturer Part Number: HFD1N80
• Description: 800V N-Channel MOSFET
• Manufacturer: SEMIHOW [SemiHow Co.,Ltd.]

Typical Characteristics
250
200
150
100
40
35
30
25
20
15
10
50
0
0.0
10
Figure 3. On Resistance Variation vs
Figure 5. Capacitance Characteristics
Figure 1. On Region Characteristics
-1
Drain Current and Gate Voltage
0.5
V
V
DS
DS
1.0
, Drain-Source Voltage [V]
, Drain-Source Voltage [V]
V
I
D
GS
10
, Drain Current [A]
0
= 20V
C
C
C
oss
iss
rss
V
GS
1.5
= 10V
2.0
C
C
C
iss
oss
rss
= C
= C
= C
※ Note : T
10
gs
gd
ds
1
+ C
+ C
gd
※ Note ;
gd
2.5
1. V
2. f = 1 MHz
(C
J
= 25 ℃
ds
GS
= shorted)
= 0 V
3.0
12
10
8
6
4
2
0
0
Figure 4. Body Diode Forward Voltage
Figure 6. Gate Charge Characteristics
Figure 2. Transfer Characteristics
1
Variation with Source Current
2
V
V
V
DS
Q
GS
SD
and Temperature
= 640V
G
, Gate-Source Voltage [V]
, Source-Drain Voltage [V]
V
, Total Gate Charge [nC]
DS
3
= 400V
V
DS
= 160V
4
5
◎ SEMIHOW REV.A0,April 2006
※ Notes : I
6
D
= 1.0 A
7
8