HFD1N80 SEMIHOW [SemiHow Co.,Ltd.], HFD1N80 Datasheet - Page 4

• Manufacturer Part Number: HFD1N80
• Description: 800V N-Channel MOSFET
• Manufacturer: SEMIHOW [SemiHow Co.,Ltd.]

Typical Characteristics
1.2
1.1
1.0
0.9
0.8
10
10
10
10
-100
-1
-2
1
0
10
0
Figure 7. Breakdown Voltage Variation
Figure 9. Maximum Safe Operating Area
-50
T
V
J
DS
, Junction Temperature [
vs Temperature
10
, Drain-Source Voltage [V]
0
10
Operation in This Area
is Limited by R
※ Notes :
10
1
1. T
2. T
3. Single Pulse
-1
10
0
C
J
= 150
= 25
-5
D=0.5
0.02
o
0.01
0.05
C
o
0.1
0.2
50
C
DS(on)
Figure 11. Transient Thermal Response Curve
(continued)
10
100
10
DC
2
-4
single pulse
o
C]
10 ms
t
※ Notes :
1
1. V
2. I
, Square Wave Pulse Duration [sec]
D
1 ms
GS
= 250 μ A
150
= 0 V
100 µs
10
-3
10
200
3
10
-2
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1.0
0.8
0.6
0.4
0.2
0.0
P
-100
25
DM
Figure 8. On-Resistance Variation
Figure 10. Maximum Drain Current
※ Notes :
10
1. Z
2. Duty Factor, D=t
3. T
-1
θ JC
JM
-50
(t) = 2.78 ℃/ W Max.
- T
50
t
1
C
t
= P
2
T
J
T
DM
10
, Junction Temperature [
C
vs Temperature
vs Case Temperature
0
, Case Temperature [
* Z
0
1
/t
θ JC
75
2
(t)
50
10
100
1
100
o
C]
o
C]
◎ SEMIHOW REV.A0,April 2006
* Notes :
125
1. V
2. I
150
D
GS
= 0.5 A
= 10 V
200
150