ACE2302B ACE [ACE Technology Co., LTD.], ACE2302B Datasheet - Page 2

• Manufacturer Part Number: ACE2302B
• Description: N-Channel Enhancement Mode MOSFET
• Manufacturer: ACE [ACE Technology Co., LTD.]

Electrical Characteristics
T
Note :
1. The value of R
2. Repetitive rating, pulse width limited by junction temperature.
3. The current rating is based on the t≤ 10s junction to ambient thermal resistance rating.
A
Maximum body-diode continuous
Drain-source on-state resistance
Drain-source breakdown voltage
T
=25℃, unless otherwise specified.
Zero gate voltage drain current
A
Reverse transfer capacitance
=25°C. The value in any given application depends on the user's specific board design.
Forward transconductance
Gate threshold voltage
Diode forward voltage
Gate leakage current
Gate-source charge
Output capacitance
Turn-on delay time
Turn-off delay time
Gate-drain charge
Input capacitance
Total gate charge
Turn-on rise time
Turn-off fall time
Parameter
θJA
current
is measured with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with
Symbol
V
R
V
Coss
(BR)DSS
Crss
Ciss
Qgs
Qgd
t
t
I
I
DS(ON)
V
g
Qg
GS(th)
d(on)
d(off)
DSS
GSS
Tr
Tf
I
FS
SD
S
Switching
N-Channel Enhancement Mode MOSFET
Dynamic
Static
V
V
V
V
R
V
I
GS
GS
V
Test Conditions
V
V
SD
GS
V
V
V
GS
DS
G
GS
GS
GS
=V
GS
DS
=4.5V, V
GS
=6Ω, V
=1.7A, V
=±12V, V
=0V, I
=20V, V
f=1.0MHz
=0V, V
=4.5V, I
=2.5V, I
=10V, I
=10V, I
=10V, I
DS
I
D
, I
=6A
D
DS
GS
=250µA
DS
DS
=250µA
GS
GS
D
D
D
=4.5V
D
D
DS
=6A
=6A
=1A
=8V,
=5A
=4A
=10V,
=0V
=0V
=0V
Min
0.6
20
522.3
0.74
19.5
22.6
0.78
10.4
27.4
98.5
74.7
ACE2302B
Typ
6.3
1.7
1.4
4.4
4.2
24
31
5
VER 1.2
Max Unit
20.8
54.8
100
1.7
8.1
2.2
1.8
8.8
8.4
26
28
42
1
1
1
mΩ
µA
nC
nA
pF
ns
V
V
S
V
A
2