BSP295_07 INFINEON [Infineon Technologies AG], BSP295_07 Datasheet - Page 3
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BSP295_07
Manufacturer Part Number
BSP295_07
Description
SIPMOS Small-Signal-Transistor
Manufacturer
INFINEON [Infineon Technologies AG]
Datasheet
1.BSP295_07.pdf
(8 pages)
Electrical Characteristics, at T
Parameter
Dynamic Characteristics
Transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Reverse Diode
Inverse diode continuous
forward current
Inv. diode direct current, pulsed I
Inverse diode forward voltage V
Reverse recovery time
Reverse recovery charge
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
g
C
C
C
t
t
t
t
I
t
Q
Symbol
j
Q
Q
Q
V
d(on)
r
d(off)
f
S
SM
rr
= 25 °C, unless otherwise specified
fs
iss
oss
rss
SD
rr
(plateau) V
gs
gd
g
V
I
V
f=1MHz
V
I
T
V
V
di
V
V
V
D
D
Page 3
A
DS
GS
DD
DD
DD
GS
DD
GS
R
F
=1.44A
=1.44 A, R
=25°C
=25V, I
/dt=100A/µs
Rev 1.3
=0, V
=15V, V
=0, I
=24V, I
=24V, I
=0 to 10V
=24V, I
2*I
Conditions
D
F
*R
DS
F =
= I
D
D
D
DS(on)max
GS
=25V,
l
G
S
S
=1.8A
=1.8A,
= 1.8 A
=15
,
=4.5V,
W
,
min.
0.8
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Values
0.84
typ.
295
1.7
5.4
9.9
0.9
5.6
3.1
95
45
27
19
36
38
14
-
-
2007-02-07
max.
368
118
8.1
1.8
7.2
1.3
67
15
41
28
1.1
8.4
3.8
45
48
17
BSP295
-
Unit
S
pF
ns
A
V
ns
nC
nC
V