M366S1623ET0 SAMSUNG [Samsung semiconductor], M366S1623ET0 Datasheet - Page 6

• Manufacturer Part Number: M366S1623ET0
• Description: 16Mx64 SDRAM DIMM based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD
• Manufacturer: SAMSUNG [Samsung semiconductor]

Notes :
M366S1623ET0
DC CHARACTERISTICS
(Recommended operating condition unless otherwise noted, T
Operating current
(one Bank Active)
Precharge standby current in
power-down mode
Precharge standby current in
non power-down mode
Active standby current in
power-down mode
Active standby current in
non power-down mode
(One bank active)
Operating current
(Burst mode)
Refresh current
Self refresh current
1. Measured with outputs open.
2. Refresh period is 64ms.
3. Unless otherwise noticed, input swing level is CMOS(V
Parameter
Symbol
I
I
I
I
CC2
CC3
I
CC2
I
I
CC3
I
CC2
CC3
I
CC2
CC3
I
I
I
CC1
CC4
CC5
CC6
PS
NS
PS
NS
P
N
P
N
Burst length =1
t
I
CKE
CKE & CLK
CKE
Input signals are changed one time during 20ns
CKE
Input signals are stable
CKE
CKE & CLK
CKE
Input signals are changed one time during 20ns
CKE
Input signals are stable
I
Page burst
4Banks activated
t
t
CKE
RC
O
O
CCD
RC
= 0 mA
= 0 mA
= 2CLKs
t
t
RC
RC
V
V
V
V
V
V
0.2V
IL
IH
IH
IL
IH
IH
(min)
(min)
(max), t
(max), t
(min), CS
(min), CLK
(min), CS
(min), CLK
V
V
IL
IL
Test Condition
(max), t
(max), t
CC
CC
A
= 10ns
= 10ns
= 0 to 70 C)
V
V
IH
V
V
IH
IH
/V
CC
CC
IL
IL
(min), t
(min), t
(max), t
(max), t
IL
=
=
=V
DDQ
CC
CC
CC
CC
/V
= 10ns
= 10ns
SSQ
=
=
).
PC133 Unbuffered DIMM
tCC=7.5ns
1,120
1,280
800
Version
REV. 0.0 Dec, 2000
240
400
240
-75
16
16
96
48
48
16
tCC=10ns
1,200
760
960
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
Note
1
1
2