M366S3253BTS-C75 SAMSUNG [Samsung semiconductor], M366S3253BTS-C75 Datasheet - Page 5

• Manufacturer Part Number: M366S3253BTS-C75
• Description: 32Mx64 SDRAM DIMM based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD
• Manufacturer: SAMSUNG [Samsung semiconductor]

M366S3253BTS
Note :
ABSOLUTE MAXIMUM RATINGS
DC OPERATING CONDITIONS AND CHARACTERISTICS
Recommended operating conditions (Voltage referenced to V
Notes :
CAPACITANCE
Voltage on any pin relative to Vss
Voltage on V
Storage temperature
Power dissipation
Short circuit current
Address (A0 ~ A12, BA0 ~ BA1)
RAS, CAS, WE
CKE (CKE0)
Clock (CLK0, CLK2)
CS (CS0, CS2)
DQM (DQM0 ~ DQM7)
DQ (DQ0 ~ DQ63)
Supply voltage
Input logic high voltage
Input logic low voltage
Output logic high voltage
Output logic low voltage
Input leakage current
Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
1. V
2. V
3. Any input 0V
Parameter
Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State outputs.
IH
IL
DD
(min) = -2.0V AC. The undershoot voltage duration is
(max) = 5.6V AC. The overshoot voltage duration is
Parameter
supply relative to Vss
Pin
(V
V
DD
IN
= 3.3V, T
V
DDQ.
A
V
= 23 C, f = 1MHz, V
Symbol
DD
V
V
V
V
, V
I
OH
OL
LI
IH
IL
DDQ
V
V
Symbol
Symbol
DD
C
C
C
IN
C
C
C
T
C
DQM
ADD
OUT
CKE
CLK
, V
I
P
, V
STG
CS
OS
IN
Min
-0.3
3.0
2.0
2.4
-10
D
-
OUT
REF
DDQ
SS
= 0V, T
= 1.4V
3ns.
3ns.
A
= 0 to 70 C)
200 mV)
Typ
3.3
3.0
0
-
-
-
Min
30
30
30
25
16
8
6
V
-55 ~ +150
DDQ
PC133 Unbuffered DIMM
-1.0 ~ 4.6
-1.0 ~ 4.6
Max
3.6
0.8
0.4
10
Value
-
+0.3
50
8
Max
40
40
40
30
25
10
8
REV. 0.1 July. 2000
Unit
uA
V
V
V
V
V
I
I
OH
OL
Unit
mA
W
Unit
V
V
Note
C
pF
pF
pF
pF
pF
pF
pF
= -2mA
= 2mA
1
2
3