M366S3253BTS-C75 SAMSUNG [Samsung semiconductor], M366S3253BTS-C75 Datasheet - Page 6
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M366S3253BTS-C75
Manufacturer Part Number
M366S3253BTS-C75
Description
32Mx64 SDRAM DIMM based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD
Manufacturer
SAMSUNG [Samsung semiconductor]
Datasheet
1.M366S3253BTS-C75.pdf
(10 pages)
Notes :
M366S3253BTS
DC CHARACTERISTICS
(Recommended operating condition unless otherwise noted, T
Operating current
(One bank active)
Precharge standby current in
power-down mode
Precharge standby current
in non power-down mode
Active standby current
in power-down mode
Active standby current
in non power-down mode
(One bank active)
Operating current
(Burst mode)
Refresh current
Self refresh current
1. Measured with outputs open.
2. Refresh period is 64ms.
3. Unless otherwise noticed, input swing level is CMOS(V
Parameter
Symbol
I
I
I
I
CC2
CC3
I
CC2
I
I
CC3
I
CC2
CC3
I
CC2
CC3
I
I
I
CC1
CC4
CC5
CC6
PS
NS
PS
NS
P
N
P
N
Burst length =1
t
I
CKE
CKE & CLK
CKE
Input signals are changed one time during 20ns
CKE
Input signals are stable
CKE
CKE & CLK
CKE
Input signals are changed one time during 20ns
CKE
Input signals are stable
I
Page burst
4Banks activated
t
t
CKE
RC
O
O
CCD
RC
= 0 mA
= 0 mA
= 2CLKs
t
t
RC
RC
V
V
V
V
V
V
0.2V
IL
IH
IH
IL
IH
IH
(min)
(min)
(max), t
(max), t
(min), CS
(min), CLK
(min), CS
(min), CLK
V
V
IL
IL
Test Condition
(max), t
(max), t
CC
CC
A
= 10ns
= 10ns
= 0 to 70 C)
V
V
IH
V
V
IH
IH
CC
CC
IL
IL
/V
(min), t
(min), t
(max), t
(max), t
IL
=
=
=V
DDQ
CC
CC
CC
CC
/V
= 10ns
= 10ns
=
=
SSQ
).
PC133 Unbuffered DIMM
tCC=7.5ns
1,120
1,760
960
Version
REV. 0.1 July. 2000
128
112
240
200
-75
16
16
48
48
24
tCC=10ns
1,680
880
920
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
Note
1
1
2