BSP324_09 INFINEON [Infineon Technologies AG], BSP324_09 Datasheet - Page 3

• Manufacturer Part Number: BSP324_09
• Description: SIPMOS Power-Transistor
• Manufacturer: INFINEON [Infineon Technologies AG]

Electrical Characteristics, at T
Parameter
Dynamic Characteristics
Transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Reverse Diode
Inverse diode continuous
forward current
Inv. diode direct current, pulsed I
Inverse diode forward voltage
Reverse recovery time
Reverse recovery charge
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
j
Symbol
g
C
C
C
t
t
t
t
I
V
t
Q
Q
Q
Q
V
= 25 °C, unless otherwise specified
d(on)
r
d(off)
f
S
SM
rr
fs
SD
iss
oss
rss
rr
(plateau) V
gs
gd
g
V
I
V
f=1MHz
V
I
T
V
V
di
V
V
V
D
D
Page 3
Rev. 2.1
A
DS
GS
DD
DD
DD
GS
DD
GS
R
F
=0.14A
=0.17A, R
=25°C
/dt=100A/µs
=200V, I
≥2*I
=0, V
=0, I
=225V, V
=0 to 10V
=320V, I
=320V, I
=320V, I
Conditions
D
F
*R
DS
=0.17A
F =
DS(on)max
G
=25V,
D
D
D
=6Ω
l
GS
S
=0.17A
=0.17A,
=0.17A
,
=10V,
,
min.
0.09
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Values
0.19
typ.
103
0.35
2.17
4.54
104
9.2
3.8
4.6
4.4
0.8
3.6
17
68
85
-
-
2009-08-18
max.
13.6
0.17
0.68
154
102
0.45
2.82
127
156
5.7
6.9
6.6
1.2
25
5.9
BSP324
-
-
Unit
S
pF
ns
A
V
ns
nC
nC
V