NP70N04MUG NEC [NEC], NP70N04MUG Datasheet - Page 4

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NP70N04MUG

Manufacturer Part Number
NP70N04MUG
Description
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET
Manufacturer
NEC [NEC]
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NP70N04MUG
Manufacturer:
NEC/RENESAS
Quantity:
12 500
4
300
200
100
3.5
2.5
1.5
0.5
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
0
4
3
2
1
0
8
6
4
2
0
GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
-75
0
1
V
Pulsed
GS
-25
T
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
= 10 V
V
ch
DS
- Channel Temperature - °C
- Drain to Source Voltage - V
I
D
0.5
25
10
- Drain Current - A
75
125
100
1
V
I
D
V
Pulsed
DS
= 250 μA
GS
175
= V
= 10 V
GS
Data Sheet D18664EJ3V0DS
225
1000
1.5
1000
100
100
0.1
10
10
10
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
1
1
8
6
4
2
0
0.1
FORWARD TRANSFER CHARACTERISTICS
0
0
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
V
Pulsed
DS
= 10 V
V
V
1
GS
GS
- Gate to Source Voltage - V
- Gate to Source Voltage - V
5
T
T
I
ch
ch
D
2
1
= −55°C
- Drain Current - A
= −55°C
150°C
175°C
150°C
175°C
25°C
75°C
25°C
75°C
10
3
NP70N04MUG
10
4
15
V
Pulsed
I
Pulsed
DS
D
5
= 35 A
= 5 V
100
6
20

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