KMM5322104CKU SAMSUNG [Samsung semiconductor], KMM5322104CKU Datasheet

no-image

KMM5322104CKU

Manufacturer Part Number
KMM5322104CKU
Description
2M x 32 DRAM SIMM using 2Mx8 , 2K Refresh, 5V
Manufacturer
SAMSUNG [Samsung semiconductor]
Datasheet
DRAM MODULE
KMM5322104CKU/CKUG Fast Page Mode with Extended Data Out
2M x 32 DRAM SIMM using 2Mx8 , 2K Refresh, 5V
GENERAL DESCRIPTION
The Samsung KMM5322104CKU is a 2Mx32bits
RAM
KMM5322104CKU consists of four CMOS 2Mx8bits DRAMs in
28-pin SOJ package mounted on a 72-pin glass-epoxy sub-
strate. A 0.1 or 0.22uF decoupling capacitor is mounted on the
printed circuit board for each DRAM. The KMM5322104CKU is
a Single In-line Memory Module with edge connections and is
intended for mounting into 72 pin edge connector sockets.
PERFORMANCE RANGE
PIN CONFIGURATIONS
Pin
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
1
2
3
4
5
6
7
8
9
Speed
-5
-6
high
Res(RAS1)
Res(A11)
Symbol
DQ18
DQ19
DQ20
DQ21
DQ22
DQ23
DQ24
DQ25
RAS0
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
A10
V
Vcc
Vcc
NC
NC
NC
A0
A1
A2
A3
A4
A5
A6
A7
A8
A9
density
SS
50ns
60ns
t
RAC
memory
Pin
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
69
70
71
72
13ns
15ns
t
CAC
Res(RAS1)
Symbol
module.
CAS0
CAS2
CAS3
CAS1
RAS0
DQ27
DQ10
DQ28
DQ11
DQ29
DQ12
DQ30
DQ13
DQ31
DQ32
DQ14
DQ33
DQ15
DQ34
DQ16
DQ9
PD1
PD2
PD3
PD4
Vss
Vcc
Vss
NC
NC
NC
NC
NC
NC
W
110ns
90ns
t
RC
The
Samsung
Dynamic
25ns
30ns
t
HPC
SAMSUNG ELECTRONICS CO., LTD. reserves the right to
change products and specifications without notice.
FEATURES
• Part Identification
• Fast Page Mode with Extended Data Out
• CAS-before-RAS refresh capability
• RAS-only and Hidden refresh capability
• TTL compatible inputs and outputs
• Single +5V 10% power supply
• JEDEC standard PDPin & pinout
• PCB : Height(1000mil), single sided component
PIN NAMES
PRESENCE DETECT PINS (Optional)
* Pin connection changing available
Pin Name
A0 - A10
DQ0 - DQ31
W
RAS0
CAS0 - CAS3
PD1 -PD4
Vcc
Vss
NC
Res
- KMM5322104CKU(2048 cycles/32ms Ref, SOJ, Solder)
- KMM5322104CKUG(2048 cycles/32ms Ref, SOJ, Gold)
PD1
PD2
PD3
PD4
Pin
KMM5322104CKU/CKUG
50NS
Vss
Vss
Function
Address Inputs
Data In/Out
Read/Write Enable
Row Address Strobe
Column Address Strobe
Presence Detect
Power(+5V)
Ground
No Connection
Reserved Pin
NC
NC
60NS
NC
NC
NC
NC

Related parts for KMM5322104CKU

KMM5322104CKU Summary of contents

Page 1

... KMM5322104CKU consists of four CMOS 2Mx8bits DRAMs in 28-pin SOJ package mounted on a 72-pin glass-epoxy sub- strate. A 0.1 or 0.22uF decoupling capacitor is mounted on the printed circuit board for each DRAM. The KMM5322104CKU is a Single In-line Memory Module with edge connections and is intended for mounting into 72 pin edge connector sockets. ...

Page 2

... CAS1 CAS OE W A0-A10 RAS CAS CAS2 OE W A0-A10 RAS CAS3 CAS OE W A0-A10 W Vcc .1 or .22uF Capacitor for each DRAM Vss KMM5322104CKU/CKUG DQ0 DQ1 DQ2 DQ3 DQ0-DQ7 DQ4 DQ5 DQ6 DQ7 DQ0 DQ1 DQ2 DQ3 U1 DQ8-DQ15 DQ4 DQ5 DQ6 DQ7 ...

Page 3

... CC T stg (Voltage referenced to V Symbol and I , address can be changed maximum once while RAS=V CC1 CC3 KMM5322104CKU/CKUG Rating - +7.0 -55 to +150 Min Typ Max t . HPC Unit Unit . In I ...

Page 4

... RRH t 10 WCH RWL t 8 CWL REF t 0 WCS t 5 CSR t 10 CHR t 5 RPC t 20 CPT KMM5322104CKU/CKUG Min Max Max Min Max 110 10K 60 10K ...

Page 5

... REZ t 3 WEZ t 15 WED t 5 WPE 8. 9. 10. t (max) RAC 11. t (max) limit, then RCD t . CAC 12 13. KMM5322104CKU/CKUG -5 -6 Max Min Max 200K 60 200K Either or must be satisfied for a read cycle. ...

Page 6

... RAS t CSH CRP t RCD t RAD t t RAH ASC t CAH ROW COLUMN ADDRESS ADDRESS t RCS CLZ t RAC OPEN KMM5322104CKU/CKUG CRP t RSH t CAS t RAL t RRH t CEZ CAC t REZ DATA-OUT t RCH t WEZ Don t care Undefined ...

Page 7

... IH CAS ASR ADDRESS RAS t CSH t RCD t RAD t t RAH ASC t CAH ROW COLUMN ADDRESS t CWL t RWL t WCS t WCH DATA-IN KMM5322104CKU/CKUG CRP t RSH t CAS t RAL Don t care Undefined ...

Page 8

... RAH ASC CAH ASC CAH COLUMN COLUMN ADDRESS ADDRESS t RCS t CAC CPA CAC t DOH t RAC VALID DATA-OUT t CLZ KMM5322104CKU/CKUG t RHCP t HPC CAS CAS ASC CAH ASC CAH COLUMN COLUMN ADDR ADDRESS t RCH t CPA t t ...

Page 9

... WCS WCH WCS WCH CWL CWL VALID VALID DATA-IN DATA-IN KMM5322104CKU/CKUG t RHCP t t HPC RSH CAS CAS ¡ó ASC CAH ¡ó COLUMN ADDRESS ¡ó WCS WCH ¡ ...

Page 10

... RAS-only refresh cycle of 64Mb A-dile & B-die, when CAS signal transits from Low to High, the valid data may be cut off. t RAS t RP RPC CSR t CHR t WRP t WRH KMM5322104CKU/CKUG RPC RAS t RPC OPEN t CRP Don t care ...

Page 11

... RAS t t RCD RSH t RAD t t RAH ASC t CAH ROW COLUMN ADDRESS t RCS CAC t CLZ t RAC OPEN KMM5322104CKU/CKUG RAS t CHR t WRH t WRP RRH t REZ t WEZ DATA-OUT CEZ Don t care Undefined ...

Page 12

... IL t ASR ADDRESS RAS CRP t t RCD RSH t RAD t t RAH ASC t CAH ROW COLUMN ADDRESS t WCS t WCH DATA-IN KMM5322104CKU/CKUG RAS t CHR t WRH t WRP Don t care Undefined ...

Page 13

... IL NOTE : This timing diagram is applied to all devices besides 64M DRAM based modules. t RAS t CPT t CHR t ASC COLUMN ADDRESS t t WRH RCS t CLZ t WRH t WCS t DS KMM5322104CKU/CKUG RSH t CAS t RAL t CAH t RRH RCH CAC DATA-OUT t RWL t CWL t WCH ...

Page 14

... IH RAS CAS CEZ RPC CSR t t WRP WRH t RP RPC CSR t CHR t WTS t WTH KMM5322104CKU/CKUG t t RASS RPS t RPC t CHS OPEN RAS t RPC OPEN Don t care Undefined ...

Page 15

... Gold & Solder Plating Lead .010(.25)MAX .050(1.27) Tolerances : .005(.13) unless otherwise specified NOTE : The used device is 2Mx8 DRAM DRAM Part No. : KMM5322104CKU/CKUG -- KM48C2104CK (300mil) Revision History Rev 0.0 : Aug. 1997. 4.250(107.95) 3.984(101.19) R.062(1.57) .125 DIA .002(3.18 .051) R.062 .004(R1.57 .10) ...

Related keywords