HCTS138HMSR INTERSIL [Intersil Corporation], HCTS138HMSR Datasheet

no-image

HCTS138HMSR

Manufacturer Part Number
HCTS138HMSR
Description
Radiation Hardened Inverting 3-to-8 Line Decoder/Demultiplexer
Manufacturer
INTERSIL [Intersil Corporation]
Datasheet
August 1995
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
Features
• 3 Micron Radiation Hardened SOS CMOS
• Total Dose 200K RAD (Si)
• SEP Effective LET No Upsets: >100 MEV-cm
• Single Event Upset (SEU) Immunity < 2 x 10
• Dose Rate Survivability: >1 x 10
• Dose Rate Upset >10
• Latch-Up Free Under Any Conditions
• Fanout (Over Temperature Range)
• Military Temperature Range: -55
• Significant Power Reduction Compared to LSTTL ICs
• DC Operating Voltage Range: 4.5V to 5.5V
• LSTTL Input Compatibility
• Input Current Levels Ii
Description
The Intersil HCTS138MS is a Radiation Hardened 3-to-8 line
Decoder/Demultiplexer. The outputs are active in the low
state. Two active low and one active high enables (E1, E2,
E3) are provided. If the device is enabled, the binary inputs
(A0, A1, A2) determine which one of the eight normally high
outputs will go to a low logic level.
The HCTS138MS utilizes advanced CMOS/SOS technology
to achieve high-speed operation. This device is a member of
radiation hardened, high-speed, CMOS/SOS Logic Family.
The HCTS138MS is supplied in a 16 lead Ceramic flatpack
(K suffix) or a SBDIP Package (D suffix).
Ordering Information
HCTS138DMSR
HCTS138KMSR
HCTS138D/Sample
HCTS138K/Sample
HCTS138HMSR
Bit-Day (Typ)
- Bus Driver Outputs - 15 LSTTL Loads
- VIL = 0.8V Max
- VIH = VCC/2 Min
PART NUMBER
10
RAD (Si)/s 20ns Pulse
5 A at VOL, VOH
TEMPERATURE RANGE
12
o
C to +125
-55
-55
RAD (Si)/s
o
o
C to +125
C to +125
+25
+25
+25
o
o
o
o
C
C
C
C
2
/mg
-9
o
o
C
C
Errors/
510
Pinouts
Intersil Class S Equivalent
Intersil Class S Equivalent
Sample
Sample
Die
HCTS138MS
GND
SCREENING LEVEL
A0
A1
A2
E1
E2
E3
Y7
3-to-8 Line Decoder/Demultiplexer
FLATPACK PACKAGE (FLATPACK)
16 LEAD CERAMIC DUAL-IN-LINE
Radiation Hardened Inverting
16 LEAD CERAMIC METAL SEAL
METAL SEAL PACKAGE (SBDIP)
GND
A0
A1
A2
E1
E2
E3
Y7
MIL-STD-1835 CDFP4-F16
MIL-STD-1835 CDIP2-T16
1
2
3
4
5
6
7
8
1
2
3
4
5
6
7
8
TOP VIEW
TOP VIEW
16 Lead SBDIP
16 Lead Ceramic Flatpack
16 Lead SBDIP
16 Lead Ceramic Flatpack
Die
16
15
14
13
12
11
10
9
16
15
14
13
12
11
10
9
Spec Number
VCC
Y0
Y1
Y2
Y3
Y4
Y5
Y6
File Number
PACKAGE
VCC
Y0
Y1
Y2
Y3
Y4
Y5
Y6
518605
2462.2

Related parts for HCTS138HMSR

HCTS138HMSR Summary of contents

Page 1

... SBDIP Package (D suffix). Ordering Information PART NUMBER TEMPERATURE RANGE HCTS138DMSR HCTS138KMSR HCTS138D/Sample HCTS138K/Sample HCTS138HMSR CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999 HCTS138MS 3-to-8 Line Decoder/Demultiplexer Pinouts 2 /mg ...

Page 2

Functional Diagram INPUTS ENABLE ...

Page 3

Absolute Maximum Ratings Supply Voltage (VCC -0.5V to +7.0V Input Voltage Range, All Inputs . . ...

Page 4

TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS PARAMETER SYMBOL Address to Output TPLH VCC = 4.5V TPHL VCC = 4.5V Enable to Output TPLH VCC = 4.5V TPHL VCC = 4.5V NOTES: 1. All voltages referenced to device GND ...

Page 5

TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued) PARAMETER SYMBOL Output Voltage Low VOL VCC = 4.5V and 5.5V, VIH = VCC/2, VIL = 0.8V at 200K RAD, IOL = 50 A Output Voltage High VOH VCC = 4.5V ...

Page 6

CONFORMANCE GROUPS METHOD Group E Subgroup 2 5005 NOTE: 1. Except FN test which will be performed 100% Go/No-Go. TABLE 8. STATIC AND DYNAMIC BURN-IN TEST CONNECTIONS OPEN GROUND STATIC BURN-IN I TEST CONNECTIONS (Note ...

Page 7

Intersil Space Level Product Flow - ‘MS’ Wafer Lot Acceptance (All Lots) Method 5007 (Includes SEM) GAMMA Radiation Verification (Each Wafer) Method 1019, 4 Samples/Wafer, 0 Rejects 100% Nondestructive Bond Pull, Method 2023 Sample - Wire Bond Pull Monitor, Method ...

Page 8

AC Timing Diagrams VIH INPUT VS VIL TPLH VOH VS OUTPUT VOL TTLH VOH 80% 20% OUTPUT VOL AC VOLTAGE LEVELS PARAMETER HCTS VCC 4.50 VIH 3.00 VS 1.30 VIL 0 GND 0 All Intersil semiconductor products are manufactured, assembled ...

Page 9

Die Characteristics DIE DIMENSIONS 101 mils METALLIZATION: Type: SiAl Å Å Metal Thickness: 11k 1k GLASSIVATION: Type: SiO 2 Å Å Thickness: 13k 2.6k WORST CASE CURRENT DENSITY <2 A/cm BOND PAD SIZE: 100 ...

Related keywords