HCTS164D INTERSIL [Intersil Corporation], HCTS164D Datasheet

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HCTS164D

Manufacturer Part Number
HCTS164D
Description
Radiation Hardened 8-Bit Serial-In/Parallel-Out Shift Register
Manufacturer
INTERSIL [Intersil Corporation]
Datasheet
August 1995
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143
Copyright © Intersil Americas Inc. 2002. All Rights Reserved
Features
• 3 Micron Radiation Hardened CMOS SOS
• Total Dose 200K RAD (Si)
• Dose Rate Survivability >10
• Dose Rate Upset >10
• Single Event Ray Upset Rate < 2 x 10
• LET Threshold >100 MEV-cm
• Latch-Up-Free Under Any Conditions
• Military Temperature Range: -55
• Significant Power Reduction Compared to LSTTL ICs
• DC Operating Voltage Range: 4.5V to 5.5V
• Input Logic Levels
• Input Current Levels Ii ≤5µA at VOL, VOH
Description
The Intersil HCTS164MS is a radiation hardened 8-bit Serial-In/
Parallel-Out Shift Register with asynchronous reset.
The HCTS164MS utilizes advanced CMOS/SOS technology to
achieve high-speed operation. This device is a member of the
radiation hardened, high-speed, CMOS/SOS Logic Family.
Ordering Information
Truth Table
H = High Voltage Level
L = Low Voltage Level
q = Lower case letters indicate the state of the referenced input (or output) one setup time prior to the LOW-to-HIGH clock transition
HCTS164DMSR
HCTS164KMSR
HCTS164D/Sample
HCTS164K/Sample
HCTS164HMSR
= DS1 and DS2 inputs must be at state one setup prior to CP (rising edge)
(Typ)
-VIL = 0.8 VCC (Max)
-VIH = VCC/2 (Min)
Reset (Clear)
OPERATING
PART NUMBER
= LOW-to-HIGH clock transition
MODE
Shift
|
Intersil (and design) is a trademark of Intersil Americas Inc.
TM
10
MR
H
H
H
H
L
RAD (Si)/s (20ns Pulse)
TEMPERATURE RANGE
12
-55
-55
2
/mg
RAD (Si)/s (20ns Pulse)
o
o
o
C to +125
C to +125
C to +125
+25
+25
+25
o
o
o
C
C
C
CP
-9
X
Errors/Bit Day
o
o
C
C
o
C
INPUTS
Intersil Class S Equivalent
Intersil Class S Equivalent
Sample
Sample
Die
8-Bit Serial-In/Parallel-Out Shift Register
DS1
1
X
H
H
L
L
Pinouts
14 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE (SBDIP)
14 LEAD CERAMIC METAL SEAL FLATPACK PACKAGE (FLATPACK)
HCTS164MS
SCREENING LEVEL
GND
DS1
DS2
Q0
Q1
Q2
Q3
DS2
H
H
X
L
L
GND
DS1
DS2
Q0
Q1
Q2
Q3
MIL-STD-1835, CDFP3-F14
MIL-STD-1835, CDIP2-T14
1
2
3
4
5
6
7
1
2
3
4
5
6
7
TOP VIEW
TOP VIEW
14 Lead SBDIP
14 Lead Ceramic Flatpack
14 Lead SBDIP
14 Lead Ceramic Flatpack
Die
Radiation Hardened
Q0
H
L
L
L
L
14
13
12
11
10
9
8
14
13
12
10
11
9
8
Spec Number
OUTPUTS
PACKAGE
VCC
Q7
Q6
Q5
Q4
MR
CP
FN
Q1-Q7
q0 - q6
q0 - q6
q0 - q6
q0 -q6
L-L
VCC
Q7
Q6
Q5
Q4
MR
CP
518613
3386.1

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HCTS164D Summary of contents

Page 1

... Parallel-Out Shift Register with asynchronous reset. The HCTS164MS utilizes advanced CMOS/SOS technology to achieve high-speed operation. This device is a member of the radiation hardened, high-speed, CMOS/SOS Logic Family. Ordering Information PART NUMBER TEMPERATURE RANGE HCTS164DMSR -55 HCTS164KMSR -55 HCTS164D/Sample HCTS164K/Sample HCTS164HMSR Truth Table OPERATING MODE MR Reset (Clear) L Shift H ...

Page 2

Functional Diagram CP DS1 DS2 MR HCTS164MS ...

Page 3

Absolute Maximum Ratings Supply Voltage (VCC -0.5V to +7.0V Input Voltage Range, All Inputs . . ...

Page 4

TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS PARAMETER SYMBOL TPLH VCC = 4.5V VCC = 4. TPHL VCC = 4.5V VCC = 4. TPHL VCC = 4.5V VCC = 4.5V NOTES: 1. ...

Page 5

TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued) PARAMETERS SYMBOL TPLH TPHL TPHL NOTES: 1. All voltages referenced to device GND measurements assume RL = 500Ω ...

Page 6

TABLE 8. STATIC AND DYNAMIC BURN-IN TEST CONNECTIONS OPEN GROUND STATIC BURN-IN I TEST CONNECTIONS (Note STATIC BURN-IN II TEST CONNECTIONS (Note ...

Page 7

Die Characteristics DIE DIMENSIONS: 95 mils x 95 mils 2.380mm x 2.410mm METALLIZATION: Type: AlSi ±1k Å Å Metal Thickness: 11k GLASSIVATION: Type: SiO 2 ±2.6k Å Å Thickness: 13k Metallization Mask Layout DS2 (2) Q0 (3) Q1 (4) NC ...

Page 8

Intersil Space Level Product Flow - MS Wafer Lot Acceptance, All Lots (including SEM); Method 5007 Gamma Radiation Verification, Each Wafer, 4 Samples/ Wafer, 0 Rejects, Method 1019 100% Nondestructive Bond Pull, Method 2023 Sample Wire Bond Pull Monitor, Method ...

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