HCTS190HMSR INTERSIL [Intersil Corporation], HCTS190HMSR Datasheet

HCTS190HMSR

Manufacturer Part Number

HCTS190HMSR

Description

Radiation Hardened Synchronous 4-Bit Up/Down Counter

Manufacturer

INTERSIL [Intersil Corporation]

Datasheet

1.HCTS190HMSR.pdf (10 pages)

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September 1995

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

Features

• 3 Micron Radiation Hardened CMOS SOS

• Total Dose 200K RAD (Si)

• SEP Effective LET No Upsets: >100 MEV-cm

• Single Event Upset (SEU) Immunity < 2 x 10

• Dose Rate Survivability: >1 x 10

• Dose Rate Upset >10

• Latch-Up Free Under Any Conditions

• Fanout (Over Temperature Range)

• Military Temperature Range: -55

• Signiﬁcant Power Reduction Compared to LSTTL ICs

• DC Operating Voltage Range: 4.5V to 5.5V

• LSTTL Input Compatibility

• Input Current Levels Ii

Ordering Information

Pinouts

HCTS190DMSR

HCTS190KMSR

HCTS190D/Sample

HCTS190K/Sample

HCTS190HMSR

16 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE

Bit-Day (Typ)

- Standard Outputs - 10 LSTTL Loads

- VIL = 0.8V Max

- VIH = VCC/2 Min

(SBDIP) MIL-STD-1835 CDIP2-T16, LEAD FINISH C

PART NUMBER

GND

U/D

TOP VIEW

RAD (Si)/s 20ns Pulse

5 A @ VOL, VOH

TEMPERATURE RANGE

C to +125

RAD (Si)/s

-55

VCC

C to +125

+25

/mg

-9

Errors/

Description

The Intersil HCTS190MS is an asynchronously presettable

BCD Decade synchronous counter. Presetting the counter to

the number on the preset data inputs (P0 - P3) is accom-

plished by a low on the parallel load input (PL). Counting

occurs when (PL) is high, Count Enable (CE) is low and the

Up/Down (U/D) input is either low for up-counting or high for

down-counting. The counter is incremented or decremented

synchronously with the low-to-high transition of the clock.

When an overﬂow or underﬂow of the counter occurs, the

Terminal Count output (TC), which is low during counting,

goes high and remains high for one clock cycle. This output

can be used for look-ahead carry in high speed cascading.

The TC output also initiates the Ripple Clock output (RC)

which, normally high, goes low and remains low for the low-

level portion of the clock pulse. These counter can be cas-

caded using the Ripple Carry output.

If the decade counter is preset to an illegal state or assumes

an illegal state when power is applied, it will return to the

normal sequence in one or two counts

The HCTS190MS utilizes advanced CMOS/SOS technology

to achieve high-speed operation. This device is a member of

radiation hardened, high-speed, CMOS/SOS Logic Family.

The HCTS190MS is supplied in a 16 lead Ceramic ﬂatpack

(K sufﬁx) or a SBDIP Package (D sufﬁx).

Intersil Class S Equivalent

Sample

Die

HCTS190MS

Synchronous 4-Bit Up/Down Counter

16 LEAD CERAMIC METAL SEAL FLATPACK PACKAGE

GND

(FLATPACK) MIL-STD-1835 CDFP4-F16, LEAD FINISH C

SCREENING LEVEL

U/D

TOP VIEW

Radiation Hardened

16 Lead SBDIP

16 Lead Ceramic Flatpack

16 Lead SBDIP

16 Lead Ceramic Flatpack

Die

Spec Number

File Number

PACKAGE

VCC

518614

2474.2

Related parts for HCTS190HMSR

HCTS190HMSR Summary of contents

Page 1

... VIL = 0.8V Max - VIH = VCC/2 Min • Input Current Levels VOL, VOH Ordering Information PART NUMBER TEMPERATURE RANGE HCTS190DMSR HCTS190KMSR HCTS190D/Sample HCTS190K/Sample HCTS190HMSR Pinouts 16 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE (SBDIP) MIL-STD-1835 CDIP2-T16, LEAD FINISH C TOP VIEW ...

Page 2

Functional Diagram U FF0 FUNCTION Count Up Count Down Asynchronous Preset No Change H = High Level L = Low Level X ...

Page 3

Absolute Maximum Ratings Supply Voltage (VCC -0.5V to +7.0V Input Voltage Range, All Inputs . . ...

Page 4

TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS PARAMETER SYMBOL TPLH VCC = 4.5V TPHL VCC = 4. TPLH VCC = 4.5V TPHL VCC = 4. TPLH VCC = 4.5V TPHL VCC = ...

Page 5

TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS PARAMETER SYMBOL Capacitance Power Dissipation CPD Input Capacitance CIN Output Transition Time TTHL TTLH Maximum Operating Frequency FMAX (CPU, CPD) Setup Time TSU Setup Time TSU Setup Time TSU ...

Page 6

TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued) PARAMETER SYMBOL Output Voltage Low VOL VCC = 4.5V and 5.5V, VIH = VCC/2, VIL = 0.8V, IOL = 50 A Output Voltage High VOH VCC = 4.5V and 5.5V, VIH ...

Page 7

CONFORMANCE GROUPS Initial Test (Preburn-In) Interim Test I (Postburn-In) Interim Test II (Postburn-In) PDA Interim Test III (Postburn-In) PDA Final Test Group A (Note 1) Group B Subgroup B-5 Subgroup B-6 Group D NOTES: 1. Alternate group A testing in ...

Page 8

Intersil Space Level Product Flow - ‘MS’ Wafer Lot Acceptance (All Lots) Method 5007 (Includes SEM) GAMMA Radiation Veriﬁcation (Each Wafer) Method 1019, 4 Samples/Wafer, 0 Rejects 100% Nondestructive Bond Pull, Method 2023 Sample - Wire Bond Pull Monitor, Method ...

Page 9

AC Timing Diagrams VIH INPUT VS VIL TPLH VOH VS OUTPUT VOL TTLH VOH 80% 20% OUTPUT VOL AC VOLTAGE LEVELS PARAMETER HCTS VCC 4.50 VIH 3.00 VS 1.30 VIL 0 GND 0 All Intersil semiconductor products are manufactured, assembled ...

Page 10

Die Characteristics DIE DIMENSIONS: 104 x 86 mils METALLIZATION: Type: AlSi Å Å Metal Thickness: 11k 1k GLASSIVATION: Type: SiO 2 Å Å Thickness: 13k 2.6k WORST CASE CURRENT DENSITY < 2 A/cm BOND PAD SIZE: ...

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