HCTS191K INTERSIL [Intersil Corporation], HCTS191K Datasheet

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HCTS191K

Manufacturer Part Number
HCTS191K
Description
Radiation Hardened Synchronous 4-Bit Up/Down Counter
Manufacturer
INTERSIL [Intersil Corporation]
Datasheet
September 1995
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
Features
• 3 Micron Radiation Hardened CMOS SOS
• Total Dose 200K RAD (Si)
• SEP Effective LET No Upsets: >100 MEV-cm
• Single Event Upset (SEU) Immunity < 2 x 10
• Dose Rate Survivability: >1 x 10
• Dose Rate Upset: >10
• Cosmic Ray Upset Immunity 2 x 10
• Latch-Up Free Under Any Conditions
• Fanout (Over Temperature Range)
• Military Temperature Range: -55
• Significant Power Reduction Compared to LSTTL ICs
• DC Operating Voltage Range: 4.5V to 5.5V
• LSTTL Input Compatibility
• Input Current Levels Ii
Description
The Intersil HCTS191MS is a Radiation Hardened asynchro-
nously presettable 4 bit binary up/down synchronous counter.
Presetting the counter to the number on the preset data inputs
(P0 - P3) is accomplished by a low asynchronous parallel load
input (PL). Counting occurs when PL is high, Count Enable (CE)
is low, and the Up/Down (U/D) input is either low for up-counting
or high for down-counting. The counter is incremented or decre-
mented synchronously with the low-to-high transition of the clock.
When an overflow or underflow of the counter occurs, the
Terminal Count output (TC), which is low during counting, goes
high and remains high for one clock cycle. This output can be
used for look-ahead carry in high speed cascading. The TC
output also initiates the Ripple Clock output (RC) which, normally
high, goes low and remains low for the low-level portion of the
clock pulse. These counter can be cascaded using the Ripple
Carry output.
The HCTS191MS utilizes advanced CMOS/SOS technology to
achieve high-speed operation. This device is a member of
radiation hardened, high-speed, CMOS/SOS Logic Family.
The HCTS191MS is supplied in a 16 lead Ceramic flatpack
(K suffix) or a SBDIP Package (D suffix).
Ordering Information
HCTS191DMSR
HCTS191KMSR
HCTS191D/Sample
HCTS191K/Sample
HCTS191HMSR
Day (Typ)
- Standard Outputs - 10 LSTTL Loads
- VIL = 0.8V Max
- VIH = VCC/2 Min
PART NUMBER
10
RAD (Si)/s 20ns Pulse
5 A @ VOL, VOH
TEMPERATURE RANGE
12
o
C to +125
-55
-55
RAD (Si)/s
-9
Errors/Bit Day
o
o
C to +125
C to +125
+25
+25
+25
o
o
o
o
C
C
C
C
2
/mg
-9
o
o
C
C
Errors/Bit-
580
Intersil Class S Equivalent
Intersil Class S Equivalent
Sample
Sample
Die
HCTS191MS
Synchronous 4-Bit Up/Down Counter
SCREENING LEVEL
Pinouts
16 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE
H = High Level, L = Low Level, X = Immaterial
NOTE: U/D or CE should be changed only when CLOCK (CP)
Count Up
Count Down
Asynchronous Preset
No Change
16 LEAD CERAMIC METAL SEAL FLATPACK PACKAGE
GND
U/D
Q1
Q0
CE
Q2
Q3
P1
FUNCTION
= Transition from low to high
is high.
(FLATPACK) MIL-STD-1835 CDFP4-F16
(SBDIP) MIL-STD-1835 CDIP2-T16
GND
U/D
CE
Q1
Q0
Q2
Q3
P1
1
2
3
4
5
6
7
8
TRUTH TABLE
1
2
3
4
5
6
7
8
TOP VIEW
TOP VIEW
PL
Radiation Hardened
H
H
H
L
16 Lead SBDIP
16 Lead Ceramic Flatpack
16 Lead SBDIP
16 Lead Ceramic Flatpack
Die
Spec Number
16
15
14
13
12
11
10
CE
X
H
L
L
9
16
15
14
13
12
11
10
File Number
9
PACKAGE
P0
CP
RC
TC
PL
P2
P3
VCC
U/D
H
X
X
L
518621
CP
2250.2
X
X
P0
CP
RC
TC
PL
P2
P3
VCC

Related parts for HCTS191K

HCTS191K Summary of contents

Page 1

... SBDIP Package (D suffix). Ordering Information PART NUMBER TEMPERATURE RANGE HCTS191DMSR HCTS191KMSR HCTS191D/Sample HCTS191K/Sample HCTS191HMSR CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999 HCTS191MS Synchronous 4-Bit Up/Down Counter Pinouts ...

Page 2

FF0 FF1 FF2 ...

Page 3

Absolute Maximum Ratings Supply Voltage (VCC -0.5V to +7.0V Input Voltage Range, All Inputs . . ...

Page 4

TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS PARAMETER SYMBOL TPLH VCC = 4.5V TPHL VCC = 4. TPLH VCC = 4.5V TPHL VCC = 4. TPLH VCC = 4.5V TPHL VCC = ...

Page 5

TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS PARAMETER SYMBOL Capacitance Power CPD VCC = 5.0V 1MHz Dissipation Input Capacitance CIN VCC = 5.0V 1MHz Output Transition TTHL VCC = 4.5V Time TTLH Maximum Operating FMAX VCC = 4.5V ...

Page 6

TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS PARAMETER SYMBOL Quiescent Current ICC VCC = 5.5V, VIN = VCC or GND Output Current (Sink) IOL VCC = 4.5V, VIN = VCC or GND, VOUT = 0.4V Output Current (Source) IOH ...

Page 7

CONFORMANCE GROUPS Initial Test (Preburn-In) Interim Test I (Postburn-In) Interim Test II (Postburn-In) PDA Interim Test III (Postburn-In) PDA Final Test Group A (Note 1) Group B Subgroup B-5 Subgroup B-6 Group D NOTE: 1. Alternate Group A testing in ...

Page 8

Intersil Space Level Product Flow - ‘MS’ Wafer Lot Acceptance (All Lots) Method 5007 (Includes SEM) GAMMA Radiation Verification (Each Wafer) Method 1019, 4 Samples/Wafer, 0 Rejects 100% Nondestructive Bond Pull, Method 2023 Sample - Wire Bond Pull Monitor, Method ...

Page 9

AC Timing Diagrams VIH INPUT VS VIL TPLH VOH VS OUTPUT VOL TTLH VOH 80% 20% OUTPUT VOL AC VOLTAGE LEVELS PARAMETER HCTS VCC 4.50 VIH 3.00 VS 1.30 VIL 0 GND 0 All Intersil semiconductor products are manufactured, assembled ...

Page 10

Die Characteristics DIE DIMENSIONS: 104 x 86 mils METALLIZATION: Type: AlSi Å Å Metal Thickness: 11k 1k GLASSIVATION: Type: SiO 2 Å Å Thickness: 13k 2.6k WORST CASE CURRENT DENSITY < 2 A/cm BOND PAD SIZE: ...

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