HCTS245D INTERSIL [Intersil Corporation], HCTS245D Datasheet

HCTS245D

Manufacturer Part Number

HCTS245D

Description

Radiation Hardened Octal Bus Transceiver, Three-State, Non-Inverting

Manufacturer

INTERSIL [Intersil Corporation]

Datasheet

1.HCTS245D.pdf (10 pages)

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

HCTS245DMSR

Manufacturer:

S/PHI

Quantity:

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Download datasheet (132Kb)

September 1995

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

http://www.intersil.com or 407-727-9207

Features

• 3 Micron Radiation Hardened CMOS SOS

• Total Dose 200K RAD (Si)

• SEP Effective LET No Upsets: >100 MEV-cm

• Single Event Upset (SEU) Immunity < 2 x 10

• Dose Rate Survivability: >1 x 10

• Dose Rate Upset >10

• Latch-Up Free Under Any Conditions

• Fanout (Over Temperature Range)

• Military Temperature Range: -55

• Signiﬁcant Power Reduction Compared to LSTTL ICs

• DC Operating Voltage Range: 4.5V to 5.5V

• LSTTL Input Compatibility

• Input Current Levels Ii

Description

The Intersil HCTS245MS is a Radiation Hardened Non-

Inverting Octal Bidirectional Bus Transceiver, Three-State,

intended for two-way asynchronous communication between

data busses. The HCTS245MS allows data transmission

from the A bus to the B bus or from the B bus to the A bus.

The logic level at the direction input (DIR) determines the

data direction. The output enable input (OE) puts the I/O port

in the high-impedance state when high.

The HCTS245MS utilizes advanced CMOS/SOS technology

to achieve high-speed operation. This device is a member of

radiation hardened, high-speed, CMOS/SOS Logic Family.

The HCTS245MS is supplied in a 20 lead Ceramic ﬂatpack

(K sufﬁx) or a SBDIP Package (D sufﬁx).

Ordering Information

HCTS245DMSR

HCTS245KMSR

HCTS245D/Sample

HCTS245K/Sample

HCTS245HMSR

Bit-Day (Typ)

- Bus Driver Outputs - 15 LSTTL Loads

- VIL = 0.8V Max

- VIH = VCC/2 Min

PART NUMBER

RAD (Si)/s 20ns Pulse

5 A at VOL, VOH

TEMPERATURE RANGE

C to +125

-55

RAD (Si)/s

Intersil Corporation 1999

C to +125

+25

Octal Bus Transceiver, Three-State, Non-Inverting

/mg

-9

Errors/

614

Pinouts

Intersil Class S Equivalent

Sample

Die

HCTS245MS

GND

DIR

SCREENING LEVEL

FLATPACK PACKAGE (FLATPACK)

20 LEAD CERAMIC DUAL-IN-LINE

20 LEAD CERAMIC METAL SEAL

METAL SEAL PACKAGE (SBDIP)

GND

DIR

MIL-STD-1835 CDFP4-F20

MIL-STD-1835 CDIP2-T20

TOP VIEW

Radiation Hardened

20 Lead SBDIP

20 Lead Ceramic Flatpack

20 Lead SBDIP

20 Lead Ceramic Flatpack

Die

Spec Number

File Number

PACKAGE

VCC

518615

VCC

2360.2

Related parts for HCTS245D

HCTS245D Summary of contents

Page 1

... The HCTS245MS is supplied lead Ceramic ﬂatpack (K sufﬁ SBDIP Package (D sufﬁx). Ordering Information PART NUMBER TEMPERATURE RANGE HCTS245DMSR HCTS245KMSR HCTS245D/Sample HCTS245K/Sample HCTS245HMSR CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. | http://www.intersil.com or 407-727-9207 Copyright HCTS245MS ...

Page 2

Functional Diagram B DATA 11 (18, 17, 16, 15, 14, 13, 12) DIR 1 OUTPUT ENABLE High Voltage Level Low Voltage Level Immaterial To prevent excess currents in the ...

Page 3

Absolute Maximum Ratings Supply Voltage (VCC -0.5V to +7.0V Input Voltage Range, All Inputs . . ...

Page 4

TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS PARAMETER SYMBOL Propagation Delay TPLH VCC = 4.5V Data to Output TPHL VCC = 4.5V Enable to Output TPZL VCC = 4.5V TPZH VCC = 4.5V Disable to Output TPLZ VCC = 4.5V TPHZ ...

Page 5

TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS PARAMETER SYMBOL Quiescent Current ICC VCC = 5.5V, VIN = VCC or GND Output Current (Sink) IOL VCC = 4.5V, VIN = VCC or GND, VOUT = 0.4V Output Current IOH VCC ...

Page 6

CONFORMANCE GROUPS Initial Test (Preburn-In) Interim Test I (Postburn-In) Interim Test II (Postburn-In) PDA Interim Test III (Postburn-In) PDA Final Test Group A (Note 1) Group B Subgroup B-5 Subgroup B-6 Group D NOTE: 1. Alternate Group A Testing in ...

Page 7

Intersil Space Level Product Flow - ‘MS’ Wafer Lot Acceptance (All Lots) Method 5007 (Includes SEM) GAMMA Radiation Veriﬁcation (Each Wafer) Method 1019, 4 Samples/Wafer, 0 Rejects 100% Nondestructive Bond Pull, Method 2023 Sample - Wire Bond Pull Monitor, Method ...

Page 8

Three-State Low Timing Diagrams VIH INPUT VS VIL TPZL VOZ VT OUTPUT VOL THREE-STATE LOW VOLTAGE LEVELS PARAMETER HCTS VCC 4.50 VIH 3.00 VS 1.30 VT 1.30 VW 0.90 GND 0 Three-State High Timing Diagrams VIH INPUT VS VIL TPZH ...

Page 9

Die Characteristics DIE DIMENSIONS: 124 x 110 mils METALLIZATION: Type: SiAl Å Å Metal Thickness: 11k 1k GLASSIVATION: Type: SiO 2 Å Å Thickness: 13k 2.6k WORST CASE CURRENT DENSITY <2 A/cm BOND PAD SIZE: 100 ...

Page 10

All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certiﬁcation. Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or speciﬁcations at any time without notice. Accordingly, ...

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