HCTS299DMSR INTERSIL [Intersil Corporation], HCTS299DMSR Datasheet

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HCTS299DMSR

Manufacturer Part Number
HCTS299DMSR
Description
Radiation Hardened 8-Bit Universal Shift Register; Three-State
Manufacturer
INTERSIL [Intersil Corporation]
Datasheet
August 1995
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207
Features
• 3 Micron Radiation Hardened CMOS SOS
• Total Dose 200K RAD (Si)
• SEP Effective LET No Upsets: >100 MEV-cm
• Single Event Upset (SEU) Immunity < 2 x 10
• Dose Rate Survivability: >1 x 10
• Dose Rate Upset >10
• Latch-Up Free Under Any Conditions
• Fanout (Over Temperature Range)
• Military Temperature Range: -55
• Significant Power Reduction Compared to LSTTL ICs
• DC Operating Voltage Range: 4.5V to 5.5V
• LSTTL Input Compatibility
• Input Current Levels Ii
Description
The Intersil HCTS299MS is a Radiation Hardened 8-bit shift/
storage register with three-state bus interface capability. The
register has four synchronous operating modes controlled by
the two select inputs (S0, S1). The mode select, the serial
data (DS0, DS7) and the parallel data (IO0 - IO7) respond
only to the low to high transition of the clock (CP) pulse. S0,
S1 and the data inputs must be one set up time period prior
to the clocks positive transition. The master reset (MR) is an
asynchronous active low input.
The HCTS299MS utilizes advanced CMOS/SOS technology
to achieve high-speed operation. This device is a member of
radiation hardened, high-speed, CMOS/SOS Logic Family
with TTL input compatibility.
Ordering Information
HCTS299DMSR
HCTS299KMSR
HCTS299D/Sample
HCTS299K/Sample
HCTS299HMSR
Bit-Day (Typ)
-Bus Driver Outputs: 15 LSTTL Loads
-VIL = 0.8V Max
-VIH = VCC/2 Min
PART NUMBER
10
RAD (Si)/s 20ns Pulse
5 A at VOL, VOH
|
Copyright
TEMPERATURE RANGE
12
o
C to +125
©
-55
-55
RAD (Si)/s
Intersil Corporation 1999
o
o
C to +125
C to +125
+25
+25
+25
o
o
o
o
C
C
C
C
2
/mg
-9
o
o
C
C
Errors/
8-Bit Universal Shift Register; Three-State
624
Pinouts
Intersil Class S Equivalent
Intersil Class S Equivalent
Sample
Sample
Die
HCTS299MS
GND
OE1
OE2
I/O6
I/O4
I/O2
I/O0
MR
Q0
SCREENING LEVEL
S0
FLATPACK PACKAGE (FLATPACK)
20 LEAD CERAMIC DUAL-IN-LINE
20 LEAD CERAMIC METAL SEAL
METAL SEAL PACKAGE (SBDIP)
GND
OE1
OE2
I/O6
I/O4
I/O2
I/O0
MR
Q0
MIL-STD-1835 CDFP4-F20
S0
MIL-STD-1835 CDIP2-T20
10
1
2
3
4
5
6
7
8
9
1
2
3
4
5
6
7
8
9
10
TOP VIEW
TOP VIEW
Radiation Hardened
20 Lead SBDIP
20 Lead Ceramic Flatpack
20 Lead SBDIP
20 Lead Ceramic Flatpack
Die
20
19
18
17
16
15
14
13
12
11
Spec Number
20
19
18
17
16
15
14
13
12
11
File Number
PACKAGE
VCC
S1
DS7
Q7
I/O7
I/O5
I/O3
I/O1
CP
DS0
518640
VCC
S1
DS7
Q7
I/O7
I/O5
I/O3
I/O1
CP
DS0
3069.1

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HCTS299DMSR Summary of contents

Page 1

... The HCTS299MS utilizes advanced CMOS/SOS technology to achieve high-speed operation. This device is a member of radiation hardened, high-speed, CMOS/SOS Logic Family with TTL input compatibility. Ordering Information PART NUMBER TEMPERATURE RANGE HCTS299DMSR HCTS299KMSR HCTS299D/Sample HCTS299K/Sample HCTS299HMSR CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. | http://www ...

Page 2

Functional Block Diagram STANDARD OUTPUT S1 DS7 VCC OE1 OE2 HCTS299MS BUS LINE OUTPUTS I/O7 I/O5 I/ ...

Page 3

FUNCTION MR CP Reset (Clear Shift Right H H Shift Left H H Hold (Do Nothing) H Parallel Load H H FUNCTION OE1 Read Register Load Register X Disable I ...

Page 4

Absolute Maximum Ratings Supply Voltage (VCC -0.5 to +7.0V Input Voltage Range, All Inputs . ...

Page 5

TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS PARAMETER SYMBOL CLK to I/On TPHL, VCC = 4.5V TPLH CLK to Q0, Q7 TPHL, VCC = 4.5V TPLH MR to Output TPHL VCC = 4.5V OEn to Output TPZH VCC = 4.5V TPHZ ...

Page 6

TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued) PARAMETER SYMBOL Setup Time S1, S0 TSU VCC = 4.5V to CLK Hold Time DS0, TH VCC = 4.5V DS7, I/On, S0 CLK Recovery Time MR TREC VCC = 4.5V to CLK ...

Page 7

TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS PARAMETER SYMBOL MR to Output TPHL VCC = 4.5V OEn to Output TPZH VCC = 4.5V TPHZ TPZL VCC = 4.5V TPLZ NOTES: 1. All voltages referenced to device GND ...

Page 8

CONFORMANCE GROUPS METHOD Group E Subgroup 2 5005 NOTE: 1. Except FN test which will be performed 100% Go/No-Go. OPEN GROUND STATIC BURN-IN I TEST CONNECTIONS (Note 16, 18, 19 STATIC BURN-IN ...

Page 9

Intersil Space Level Product Flow - ‘MS’ Wafer Lot Acceptance (All Lots) Method 5007 (Includes SEM) GAMMA Radiation Verification (Each Wafer) Method 1019, 4 Samples/Wafer, 0 Rejects 100% Nondestructive Bond Pull, Method 2023 Sample - Wire Bond Pull Monitor, Method ...

Page 10

AC Timing Diagrams and Load Circuit INPUT LEVEL TPHL VS I/On FIGURE 1. CLOCK PRE-REQUISITE AND PROPAGATION DELAYS INPUT LEVEL VS VS DS0, DS7 OR I/On TH(L) TSU( FIGURE 3. DATA ...

Page 11

Three-State Low Timing Diagrams VIH INPUT VS VIL TPZL VOZ VT OUTPUT VOL Three-State LOW VOLTAGE LEVELS PARAMETER HCTS VCC 4.50 VIH 3.00 VS 1.30 VT 1.30 VW 0.90 VIL 0 GND 0 Three-State High Timing Diagrams VIH INPUT VS ...

Page 12

Die Characteristics DIE DIMENSIONS: 123 x 94 mils METALLIZATION: Type: SiAl Å Å Metal Thickness: 11k 1k GLASSIVATION: Type: SiO 2 Å Å Thickness: 13k 2.6k WORST CASE CURRENT DENSITY <2 A/cm BOND PAD SIZE: 100 ...

Page 13

All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, ...

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