HCTS541HMSR INTERSIL [Intersil Corporation], HCTS541HMSR Datasheet
HCTS541HMSR
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HCTS541HMSR Summary of contents
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... SBDIP Package (D suffix). Ordering Information PART NUMBER TEMPERATURE RANGE HCTS541DMSR HCTS541KMSR HCTS541D/Sample HCTS541K/Sample HCTS541HMSR CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999 HCTS541MS Radiation Hardened Non-Inverting Octal Buffer/Line Driver, Three-State Pinouts 2 ...
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Functional Block Diagram TTL 2 TTL 3 TTL 4 TTL 5 TTL 6 TTL 7 TTL 8 TTL 1 19 TTL OE1 High Voltage Level Low Voltage Level Immaterial, Z ...
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Absolute Maximum Ratings Supply Voltage (VCC -0.5 to +7.0V Input Voltage Range, All Inputs . ...
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TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS PARAMETER SYMBOL Data to Output TPHL, VCC = 4.5V TPLH VCC = 4.5V Enable to Output TPZL VCC = 4.5V TPZH VCC = 4.5V Disable to Output TPLZ VCC = 4.5V TPHZ VCC = ...
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TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS PARAMETER SYMBOL Quiescent Current ICC VCC = 5.5V, VIN = VCC or GND Output Current (Sink) IOL VCC = 4.5V, VIN = VCC or GND, VOUT = 0.4V Output Current IOH VCC ...
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CONFORMANCE GROUPS Initial Test (Preburn-In) Interim Test I (Postburn-In) Interim Test II (Postburn-In) PDA Interim Test III (Postburn-In) PDA Final Test Group A (Note 1) Group B Subgroup B-5 Subgroup B-6 Group D NOTE: 1. Alternated Group A Inspection in ...
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Intersil Space Level Product Flow - ‘MS’ Wafer Lot Acceptance (All Lots) Method 5007 (Includes SEM) GAMMA Radiation Verification (Each Wafer) Method 1019, 4 Samples/Wafer, 0 Rejects 100% Nondestructive Bond Pull, Method 2023 Sample - Wire Bond Pull Monitor, Method ...
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AC Timing Diagrams VIH INPUT VS VIL TPLH VOH VS OUTPUT VOL TTLH VOH 80% 20% OUTPUT VOL AC VOLTAGE LEVELS PARAMETER HCTS VCC 4.50 VIH 3.00 VS 1.30 VIL 0 VSS 0 Three-State Low Timing Diagrams VIH INPUT VS ...
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Three-State High Timing Diagrams VIH INPUT VS VIL TPZH VOH VT OUTPUT VOZ THREE-STATE HIGH VOLTAGE LEVELS PARAMETER HCTS VCC 4.50 VIH 3.00 VS 1.30 VT 1.30 VW 3.60 GND 0 All Intersil semiconductor products are manufactured, assembled and tested ...
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Die Characteristics DIE DIMENSIONS: 101 x 85 mils METALLIZATION: Type: SiAl Å Å Metal Thickness: 11k 1k GLASSIVATION: Type: SiO 2 Å Å Thickness: 13k 2.6k WORST CASE CURRENT DENSITY <2 A/cm BOND PAD SIZE: 100 ...