HCTS75DMSR INTERSIL [Intersil Corporation], HCTS75DMSR Datasheet

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HCTS75DMSR

Manufacturer Part Number
HCTS75DMSR
Description
Radiation Hardened Dual 2-Bit Bistable Transparent Latch
Manufacturer
INTERSIL [Intersil Corporation]
Datasheet
September 1995
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207
Features
• 3 Micron Radiation Hardened SOS CMOS
• Total Dose 200K RAD (Si)
• SEP Effective LET No Upsets: >100 MEV-cm
• Single Event Upset (SEU) Immunity < 2 x 10
• Dose Rate Survivability: >1 x 10
• Dose Rate Upset >10
• Latch-Up Free Under Any Conditions
• Military Temperature Range: -55
• Significant Power Reduction Compared to LSTTL ICs
• DC Operating Voltage Range: 4.5V to 5.5V
• LSTTL Input Compatibility
• Input Current Levels Ii
Description
The Intersil HCTS75MS is a Radiation Hardened dual 2-bit
bistable transparent latch. Each of the two latches are controlled
by a separate enable input (E) which are active low. E low latches
the output state.
The HCTS75MS utilizes advanced CMOS/SOS technology to
achieve high-speed operation. This device is a member of radia-
tion hardened, high-speed, CMOS/SOS Logic Family.
The HCTS75MS is supplied in a 16 lead Ceramic flatpack
(K suffix) or a SBDIP Package (D suffix).
Ordering Information
HCTS75DMSR
HCTS75KMSR
HCTS75D/
Sample
HCTS75K/
Sample
HCTS75HMSR
(Typ)
- VIL = 0.8V Max
- VIH = VCC/2 Min
NUMBER
PART
TEMPERATURE
-55
-55
o
o
C to +125
C to +125
RANGE
+25
+25
+25
10
o
o
o
C
C
C
RAD (Si)/s 20ns Pulse
5 A at VOL, VOH
|
o
o
Copyright
C
C
Intersil Class
S Equivalent
Intersil Class
S Equivalent
Sample
Sample
Die
SCREENING
12
o
C to +125
LEVEL
©
RAD (Si)/s
Intersil Corporation 1999
o
-9
C
2
16 Lead SBDIP
16 Lead Ceramic
Flatpack
16 Lead SBDIP
16 Lead Ceramic
Flatpack
Die
/mg
Errors/Bit-Day
PACKAGE
470
Dual 2-Bit Bistable Transparent Latch
Pinouts
Functional Diagram
16 LEAD CERAMIC METAL SEAL FLATPACK PACKAGE
(FLATPACK) MIL-STD-1835 CDFP4-F16, LEAD FINISH C
D0
D1
HCTS75MS
Q0
D0
D1
D0
D1
Q1
12
VCC
13(4)
E
E
5
2(6)
3(7)
1
1
1
2
2
2
2
D
H
X
L
VCC
GND
MIL-STD-1835 CDIP2-T16, LEAD FINISH C
INPUTS
VCC
16 LEAD CERAMIC DUAL-IN-LINE
METAL SEAL PACKAGE (SBDIP)
Q0
D0
D1
D0
D1
Q1
E
1
1
1
2
2
2
2
E
H
H
L
1
2
3
4
5
6
7
8
TRUTH TABLE
D
LE
LE
D
1
2
3
4
5
6
7
8
LATCH 1
LATCH 0
TOP VIEW
TOP VIEW
Radiation Hardened
LE
LE
Q
Q
Q0
Q
H
L
Spec Number
16
15
14
13
12
11
10
9
File Number
16
15
14
13
12
11
10
9
OUTPUTS
1
1
1
1
2
2
2
Q0
Q1
Q1
E
GND
Q0
Q0
Q1
Q0
Q
H
L
518625
3189.1
1
1
1
1
2
2
2
GND
16(10
Q0
Q1
Q1
E
Q0
Q0
Q1
1(11
14(8
15(9

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HCTS75DMSR Summary of contents

Page 1

... This device is a member of radia- tion hardened, high-speed, CMOS/SOS Logic Family. The HCTS75MS is supplied lead Ceramic flatpack (K suffi SBDIP Package (D suffix). Ordering Information PART TEMPERATURE SCREENING NUMBER RANGE o o HCTS75DMSR - +125 C Intersil Class S Equivalent o o HCTS75KMSR - +125 C ...

Page 2

Absolute Maximum Ratings Supply Voltage (VCC -0.5V to +7.0V Input Voltage Range, All Inputs . . ...

Page 3

TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS PARAMETER SYMBOL Propagation Delay TPLH VCC = 4.5V, VIH = 3.0V VIL = 0V TPHL VCC = 4.5V, VIH = 3.0V, VIL = 0V Propagation Delay TPLH VCC = 4.5V, VIH ...

Page 4

TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS PARAMETERS SYMBOL Supply Current ICC VCC = 5.5V, VIN = VCC or GND Output Current IOL VCC = VIH = 4.5V, VOUT = 0.4V, VIL = 0V (Sink) Output Current IOH VCC ...

Page 5

CONFORMANCE GROUPS Initial Test (Preburn-In) Interim Test I (Postburn-In) Interim Test II (Postburn-In) PDA Interim Test III (Postburn-In) PDA Final Test Group A (Note 1) Group B Subgroup B-5 Subgroup B-6 Group D NOTES: 1. Alternate group A inspection in ...

Page 6

Intersil Space Level Product Flow - ‘MS’ Wafer Lot Acceptance (All Lots) Method 5007 (Includes SEM) GAMMA Radiation Verification (Each Wafer) Method 1019, 4 Samples/Wafer, 0 Rejects 100% Nondestructive Bond Pull, Method 2023 Sample - Wire Bond Pull Monitor, Method ...

Page 7

Propagation Delay Timing Diagram and Load Circuit VIH INPUT VS VSS TPLH VOH VS OUTPUT VOL Transition Timing Diagram TTLH VOH 80% 20% OUTPUT VOL Pulse Width, Setup, Hold Timing Diagram and Load Circuit D INPUT VIH VS VIL TH ...

Page 8

Die Characteristics DIE DIMENSIONS mils 2.25 x 2.24mm METALLIZATION: Type: SiAl Å Å Metal Thickness: 11k 1k GLASSIVATION: Type: SiO 2 Å Å Thickness: 13k 2.6k WORST CASE CURRENT DENSITY <2 A/cm BOND ...

Page 9

All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, ...

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