HCTS85HMSR INTERSIL [Intersil Corporation], HCTS85HMSR Datasheet

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HCTS85HMSR

Manufacturer Part Number
HCTS85HMSR
Description
Radiation Hardened 4-Bit Magnitude Comparator
Manufacturer
INTERSIL [Intersil Corporation]
Datasheet
September 1995
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207
Features
• 3 Micron Radiation Hardened SOS CMOS
• Total Dose 200K RAD (Si)
• SEP Effective LET No Upsets: >100 MEV-cm
• Single Event Upset (SEU) Immunity < 2 x 10
• Dose Rate Survivability: >1 x 10
• Dose Rate Upset >10
• Latch-Up Free Under Any Conditions
• Fanout (Over Temperature Range)
• Military Temperature Range: -55
• Significant Power Reduction Compared to LSTTL ICs
• DC Operating Voltage Range: 4.5V to 5.5V
• LSTTL Input Compatibility
• Input Current Levels Ii
Description
The Intersil HCTS85MS is a Radiation Hardened 4-bit high
speed magnitude comparator. This device compares two
binary, BCD, or other monotonic codes and presents the
three possible magnitude results at the outputs (A>B, A<B,
and A=B). The 4-bit input words are weighted (A0 to A3 and
B0 to B3), where A3 and B3 are the most significant bits.
The HCTS85MS is expandable without external gating, both
serial and parallel operation.
The HCTS85MS utilizes advanced CMOS/SOS technology
to achieve high-speed operation. This device is a member of
radiation hardened, high-speed, CMOS/SOS Logic Family
with TTL input compatibility.
The HCTS85MS is supplied in a 16 lead Ceramic flatpack
(K suffix) or a SBDIP Package (D suffix).
Ordering Information
HCTS85DMSR
HCTS85KMSR
HCTS85D/Sample
HCTS85K/Sample
HCTS85HMSR
Bit-Day (Typ)
-Standard Outputs: 10 LSTTL Loads
-VIL = 0.8V Max
-VIH = VCC/2 Min
PART NUMBER
10
RAD (Si)/s 20ns Pulse
5 A at VOL, VOH
|
Copyright
TEMPERATURE RANGE
12
o
C to +125
©
RAD (Si)/s
-55
-55
Intersil Corporation 1999
o
o
C to +125
C to +125
+25
+25
+25
o
o
o
o
C
C
C
C
2
/mg
-9
o
o
C
C
Errors/
1
Pinouts
Intersil Class S Equivalent
Intersil Class S Equivalent
Sample
Sample
Die
(A<B)OUT
(A=B)OUT
(A>B)OUT
16 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE
(A<B)IN
(A=B)IN
(A>B)IN
16 LEAD CERAMIC METAL SEAL FLATPACK PACKAGE
(FLATPACK) MIL-STD-1835 CDFP4-F16, LEAD FINISH C
SCREENING LEVEL
GND
(SBDIP) MIL-STD-1835 CDIP2-T16, LEAD FINISH C
HCTS85MS
B3
(A<B)OUT
(A=B)OUT
(A>B)OUT
(A<B)IN
(A=B)IN
(A>B)IN
4-Bit Magnitude Comparator
GND
B3
1
2
3
4
5
6
7
8
TOP VIEW
TOP VIEW
1
2
3
4
5
6
7
8
Radiation Hardened
16 Lead SBDIP
16 Lead Ceramic Flatpack
16 Lead SBDIP
16 Lead Ceramic Flatpack
Die
16
15
14
13
12
11
10
16
15
14
13
12
11
10
Spec Number
9
9
File Number
PACKAGE
VCC
A3
B2
A2
A1
B1
A0
B0
518624
3059.1
VCC
A3
B2
A2
A1
B1
A0
B0

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HCTS85HMSR Summary of contents

Page 1

... SBDIP Package (D suffix). Ordering Information PART NUMBER TEMPERATURE RANGE HCTS85DMSR HCTS85KMSR HCTS85D/Sample HCTS85K/Sample HCTS85HMSR CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. | http://www.intersil.com or 407-727-9207 Copyright HCTS85MS Pinouts 16 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE ...

Page 2

Functional Block Diagram (A> (A=B) ...

Page 3

Absolute Maximum Ratings Supply Voltage (VCC -0.5V to +7.0V Input Voltage Range, All Inputs . . ...

Page 4

TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS PARAMETER SYMBOL An to (A>B)OUT TPHL, VCC = 4.5V TPLH Bn to (A>B)OUT TPHL, VCC = 4.5V TPLH An (A<B)OUT TPHL, VCC = 4.5V TPLH An (A=B)OUT TPHL, VCC = ...

Page 5

TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS PARAMETER SYMBOL Quiescent Current ICC VCC = 5.5V, VIN = VCC or GND Output Current (Sink) IOL VCC = 4.5V, VIN = VCC or GND, VOUT = 0.4V Output Current IOH VCC ...

Page 6

CONFORMANCE GROUPS Initial Test (Preburn-In) Interim Test I (Postburn-In) Interim Test II (Postburn-In) PDA Interim Test III (Postburn-In) PDA Final Test Group A (Note 1) Group B Subgroup B-5 Subgroup B-6 Group D NOTES: 1. Alternate Group A testing in ...

Page 7

Intersil Space Level Product Flow - ‘MS’ Wafer Lot Acceptance (All Lots) Method 5007 (Includes SEM) GAMMA Radiation Verification (Each Wafer) Method 1019, 4 Samples/Wafer, 0 Rejects 100% Nondestructive Bond Pull, Method 2023 Sample - Wire Bond Pull Monitor, Method ...

Page 8

AC Timing Diagrams VIH INPUT VS VIL TPLH VOH VS OUTPUT VOL TTLH VOH 80% 20% OUTPUT VOL AC VOLTAGE LEVELS PARAMETER HCTS VCC 4.50 VIH 3.00 VS 1.30 VIL 0 GND 0 HCTS85MS AC Load Circuit DUT TPHL CL ...

Page 9

Die Characteristics DIE DIMENSIONS: 100 x 100 mils METALLIZATION: Type: SiAl Å Å Metal Thickness: 11k 1k GLASSIVATION: Type: SiO 2 Å Å Thickness: 13k 2.6k WORST CASE CURRENT DENSITY <2 A/cm BOND PAD SIZE: 100 ...

Page 10

All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, ...

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