SI8401DB-T1 VISHAY [Vishay Siliconix], SI8401DB-T1 Datasheet
SI8401DB-T1
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SI8401DB-T1 Summary of contents
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... MICRO FOOT Bump Side View Backside View 8401 xxx Ordering Information: Si8401DB-T1 Si8401DB-T1—E3 (Lead Free) ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage a a Continuous Drain Current (T Continuous Drain Current (T = 150_C) = 150_C Pulsed Drain Current ...
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... Si8401DB Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a On-State Drain Current a a Drain-Source On-State Resistance Drain Source On State Resistance a Forward Transconductance a Diode Forward Voltage ...
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... V − Source-to-Drain Voltage (V) SD Document Number: 71674 S-40384—Rev. F, 01-Mar 25_C J 0.8 1.0 1.2 Si8401DB Vishay Siliconix Capacitance 1500 1200 C iss 900 600 C oss 300 C rss − Drain-to-Source Voltage (V) DS On-Resistance vs. Junction Temperature 1 ...
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... Si8401DB Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0 250 mA D 0.3 0.2 0.1 0.0 −0.1 −0.2 −50 − − Temperature (_C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 −4 − Normalized Thermal Transient Impedance, Junction-to-Foot ...
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... A 0.340 0.360 0.0134 2 b 0.370 0.410 0.0146 D 1.520 1.600 0.0598 E 1.520 1.600 0.0598 e 0.750 0.850 0.0295 S 0.370 0.380 0.0146 Si8401DB Vishay Siliconix Silicon Bump Note INCHES Max 0.0256 0.0114 0.0142 0.0161 0.0630 0.0630 0.0335 0.0150 www.vishay.com 5 ...