CM600HA-5F_00 MITSUBISHI [Mitsubishi Electric Semiconductor], CM600HA-5F_00 Datasheet - Page 2

• Manufacturer Part Number: CM600HA-5F_00
• Description: IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE
• Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]

Absolute Maximum Ratings, T
Junction Temperature
Storage Temperature
Collector-Emitter Voltage (G-E Short)
Gate-Emitter Voltage (C-E Short)
Collector Current (T
Peak Collector Current (T
Emitter Current** (T
Peak Emitter Current**
Maximum Collector Dissipation (T
Mounting Torque, M6 Main Terminal
Mounting Torque, M6 Mounting
Mounting Torque, M4 Terminal
Weight
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
*Pulse width and repetition rate should be such that the device junction temperature (T
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Static Electrical Characteristics, T
Characteristics
Collector-Cutoff Current
Gate Leakage Current
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Total Gate Charge
Emitter-Collector Voltage
** Pulse width and repetition rate should be such that device junction temperature rise is negligible.
Dynamic Electrical Characteristics, T
Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Resistive
Load
Switching
Times
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
Thermal and Mechanical Electrical Characteristics, T
Characteristics
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Contact Thermal Resistance
C
C
= 25 C)
= 25 C)
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
j
150 C)
C
= 25 C)
j
= 25 C unless otherwise specified
j
V
= 25 C unless otherwise specified
Symbol
V
Symbol
Symbol
R
R
R
CE(sat)
t
t
I
I
C
C
GE(th)
V
C
d(on)
d(off)
CES
GES
th(j-c)
th(j-c)
th(c-f)
Q
Q
j
t
oes
EC
res
t
t
ies
rr
r
G
f
= 25 C unless otherwise specified
rr
Per Module, Thermal Grease Applied
V
I
C
CC
V
I
I
GE1
= 600A, V
E
E
j
) does not exceed T
= 100V, I
= 600A, di
= 600A, di
V
V
V
I
I
V
C
C
I
CC
CE
GE
= V
E
GE
j
Free Wheel Diode
= 60mA, V
= 600A, V
= 600A, V
Test Conditions
Test Conditions
Test Conditions
= 25 C unless otherwise specified
Resistive Load
= V
= 100V, I
= V
GE2
= 0V, V
Per IGBT
GE
C
CES
GES
= 10V, R
E
E
= 600A, V
= 10V, T
/dt = -1200A/ s
/dt = -1200A/ s
, V
, V
GE
CE
j(max)
CE
C
GE
GE
CE
= 600A,
= 10V
= 10V,
= 10V
= 0V
rating.
G
= 0V
= 0V
j
GE
= 150 C
= 4.2 ,
Symbol
V
V
T
V
I
I
= 10V
GES
CES
CM
EM
P
I
—
—
—
—
T
I
stg
C
iso
E
c
j
HIGH POWER SWITCHING USE
MITSUBISHI IGBT MODULES
Min.
Min.
Min.
3.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
1.96 ~ 2.94
1.96 ~ 2.94
0.98 ~ 1.47
-40 to 150
-40 to 125
Ratings
1200
1200
2500
250
600
600
960
400
2200
20
CM600HA-5F
Typ.
Typ.
Typ.
4.0
1.2
1.1
9.5
—
—
—
—
—
—
—
—
—
—
—
—
—
—
INSULATED TYPE
0.040
Max.
1.7**
Max.
1000
4000
1000
Max.
0.13
0.19
165
500
300
1.0
0.5
5.0
2.0
7.5
5.6
—
—
—
Amperes
Amperes
Amperes
Amperes
Grams
Watts
N · m
N · m
N · m
Units
Vrms
Sep.2000
Volts
Volts
Units
Units
Units
Volts
Volts
Volts
Volts
C
C
mA
C/W
C/W
C/W
nC
nF
nF
nF
ns
ns
ns
ns
ns
C
A