CM600HA-5F_00 MITSUBISHI [Mitsubishi Electric Semiconductor], CM600HA-5F_00 Datasheet - Page 3

• Manufacturer Part Number: CM600HA-5F_00
• Description: IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE
• Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]

1200
1000
800
600
400
200
10
10
10
0
5
4
3
2
1
0
4
3
2
10
0
0
SATURATION VOLTAGE CHARACTERISTICS
V
T
1
T
V
V
R
T
GE
COLLECTOR-EMITTER VOLTAGE, V
j
j
CC
GE
j
G
= 25
= 25 C
= 125 C
GATE-EMITTER VOLTAGE, V
= 15V
= 4.2
COLLECTOR CURRENT, I
SWITCHING CHARACTERISTICS
= 100V
= 10V
OUTPUT CHARACTERISTICS
o
1
C
COLLECTOR-EMITTER
t
d(off)
t
d(on)
5
t
HALF-BRIDGE
t
f
r
2
(TYPICAL)
(TYPICAL)
(TYPICAL)
10
8
6
10
2
4.5
3
C
I
I
I
, (AMPERES)
10
C
C
C
GE
5.75
5.5
5.25
5.0
4.75
= 600A
= 1200A
= 240A
, (VOLTS)
CE
, (VOLTS)
4
10
15
5
3
1200
1000
800
600
400
200
10
10
10
10
10
10
10
0
4
3
2
1
3
2
1
10
0.6
0
REVERSE RECOVERY CHARACTERISTICS
1
V
T
di/dt = -1200A/ sec
T
EMITTER-COLLECTOR VOLTAGE, V
j
CE
j
= 25 C
= 25 C
GATE-EMITTER VOLTAGE, V
0.8
TRANSFER CHARACTERISTICS
= 10V
FORWARD CHARACTERISTICS
EMITTER CURRENT, I
T
T
2
j
j
= 25 C
= 125 C
FREE-WHEEL DIODE
1.0
(TYPICAL)
4
(TYPICAL)
(TYPICAL)
1.2
10
2
I
t
rr
rr
E
6
, (AMPERES)
1.4
GE
, (VOLTS)
EC
, (VOLTS)
8
1.6
1.8
10
10
3
10
10
10
3
2
1
10
10
10
10
2.0
1.5
1.0
0.5
20
15
10
HIGH POWER SWITCHING USE
0
3
2
1
0
5
0
10
0
0
SATURATION VOLTAGE CHARACTERISTICS
-1
MITSUBISHI IGBT MODULES
V
V
I
COLLECTOR-EMITTER VOLTAGE, V
C
GE
GE
= 600A
200
COLLECTOR-CURRENT, I
= 15V
= 0V
T
T
1
j
j
= 25 C
= 125 C
CAPACITANCE VS. V
COLLECTOR-EMITTER
GATE CHARGE, V
GATE CHARGE, Q
400
10
CM600HA-5F
0
V
(TYPICAL)
(TYPICAL)
2
CC
600
INSULATED TYPE
= 50V
V
3
CC
C
G
800
10
, (AMPERES)
, (nC)
= 100V
GE
1
CE
CE
1000
, (VOLTS)
4
C
C
C
oes
ies
res
Sep.2000
1200
10
5
2