TPC8012-H_06 TOSHIBA [Toshiba Semiconductor], TPC8012-H_06 Datasheet
TPC8012-H_06
Related parts for TPC8012-H_06
TPC8012-H_06 Summary of contents
Page 1
... V DSS V 200 V DGR ± GSS 150 °C ch −55 to 150 T °C stg 1 TPC8012-H Unit: mm JEDEC ― JEITA ― TOSHIBA 2-6J1B Weight: 0.085 g (typ.) Circuit Configuration 2006-01-17 ...
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... Year of manufacture (The last digit of the calendar year) Symbol Max Unit R 65.8 °C/W th (ch-a) (Note 2a) R 125 °C/W th (ch-a) (Note 2b) (b) Device mounted on a glass-epoxy board (b) FR-4 25.4 × 25.4 × 0.8 (Unit: mm Ω TPC8012-H FR-4 25.4 × 25.4 × 0.8 (Unit: mm) (b) = 1.8 A 2006-01-17 ...
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... 1 (Ta = 25°C) Symbol Test Condition ⎯ I DRP = 1 DSF TPC8012-H Min Typ. Max = 0 V ⎯ ⎯ ± ⎯ ⎯ 100 ⎯ 200 ⎯ 3.0 5.0 ⎯ 0.28 0.40 0.65 1.35 ⎯ 440 = MHz ⎯ ...
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... Drain-source voltage V 1.0 0.8 0.6 0.4 0 Gate-source voltage V 1 Common source Ta = 25°C Pulse test 0.1 0.01 10 0.1 Drain current I 4 TPC8012-H I – Common source 7 25°C Pulse test – Common source Ta = 25°C Pulse test = 1 ...
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... C iss 2.0 C oss Common source 1 Pulse test 0 −80 −40 Ambient temperature Ta ( 100 (V) 200 V DS 160 120 160 0 C) ° 5 TPC8012-H I – 4 −0.4 −0.6 −0.8 −1.0 −1.2 ( – 120 160 C) ° ...
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... Safe operating area MAX (Pulse 0.1 * Single-pulse Ta = 25°C Curves must be derated linearly with increase in temperature. 0.01 0 100 Drain-source voltage V (V) DS − Single - pulse 1 10 100 Pulse width t ( DSS MAX 1000 6 TPC8012-H (2) (1) 1000 2006-01-17 ...
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... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 7 TPC8012-H 20070701-EN 2006-01-17 ...