TPCA8014-H_06 TOSHIBA [Toshiba Semiconductor], TPCA8014-H_06 Datasheet

TPCA8014-H_06

Manufacturer Part Number

TPCA8014-H_06

Description

High-Efficiency DC?DC Converter Applications

Manufacturer

TOSHIBA [Toshiba Semiconductor]

Datasheet

1.TPCA8014-H_06.pdf (7 pages)

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High-Efficiency DC／DC Converter Applications

Notebook PC Applications

Portable Equipment Applications

•

Absolute Maximum Ratings

Small footprint due to a small and thin package

High-speed switching

Small gate charge: Qsw = 7.4 nC (typ.)

Low drain-source ON-resistance: R

High forward transfer admittance: |Y

Low leakage current: I

Enhancement mode: V

Drain-source voltage

Drain-gate voltage (R

Gate-source voltage

Drain current

Drain power dissipation (Tc = 25℃)

Drain power dissipation

Single-pulse avalanche energy

Avalanche current

Repetitive avalanche energy

Channel temperature

Storage temperature range

Note: For Notes 1 to 5, refer to the next page.

This transistor is an electrostatic-sensitive device. Handle with care.

TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII)

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Characteristic

(Tc=25℃) (Note 4)

Pulsed (Note 1)

= 20 kΩ)

DSS

(Note 2a)

(Note 2b)

(t = 10 s)

= 1.1 to 2.3 V (V

(Note 1)

(Note 3)

= 10 µA (max) (V

TPCA8014-H

DS (ON)

(Ta = 25°C)

Symbol

DGR

GSS

DSS

stg

| = 47 S (typ.)

= 7.1 mΩ (typ.)

= 10 V, I

= 40 V)

−55 to 150

Rating

±20

150

2.8

1.6

2.7

= 1 mA)

Unit

°C

Weight: 0.068 g (typ.)

Circuit Configuration

JEDEC

JEITA

TOSHIBA

0.95±0.05

1,2,3：SOURCE

5,6,7,8：DRAIN

0.5±0.1 1.27

4.25±0.2

0.05 S

5.0±0.2

TPCA8014-H

0.4±0.1

2-5Q1A

2006-11-17

―

0.8±0.1

4：GATE

1.1±0.2

0.05 M A

0.15±0.05

0.595

Unit: mm

0.166±0.05

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TPCA8014-H_06 Summary of contents

Page 1

... 150 °C ch −55 to 150 T °C stg 1 TPCA8014-H Unit: mm 0.4±0.1 0.5±0.1 1.27 0. 0.15±0. 0.595 5.0±0.2 A 0.95±0.05 0.166±0.05 0. 1.1±0 4.25±0 0.8±0.1 1,2,3：SOURCE 4：GATE 5,6,7,8：DRAIN JEDEC ― JEITA ― ...

Page 2

... Year of manufacture (The last digit of the calendar year) Symbol Max Unit R 2.78 °C/W th (ch-c) R 44.6 °C/W th (ch-a) R 78.1 °C/W th (ch-a) (b) Device mounted on a glass-epoxy board (b) FR-4 (Unit: mm) ( Ω TPCA8014-H FR-4 25.4 × 25.4 × 0.8 (Unit: mm) 2006-11-17 ...

Page 3

... (Ta = 25°C) Symbol Test Condition ⎯ I DRP = DSF TPCA8014-H Min Typ. Max Unit ⎯ ⎯ ±10 µA ⎯ ⎯ µA 10 ⎯ ⎯ ⎯ ⎯ 25 ⎯ 1.1 2.3 V ⎯ ...

Page 4

... Gate-source voltage (ON) 100 Common source °C Pulse test 10 100 1 0.1 1 Drain current I 4 TPCA8014-H I – Common source 3 °C Pulse test 3 (V) DS – Common source °C Pulse test ...

Page 5

... Common source COMMON SOURCE 0 Pulse test PULSE TEST 0 −80 −40 100 0 Ambient temperature TPCA8014-H I – − − − 0.4 0.6 0.8 1.0 ( – 120 160 C) ° ...

Page 6

... Tc = 25℃ Curves must be derated linearly with increase in temperature. V max DSS 0.1 0 Drain-source voltage V DS (V) r – (2) (1) (3) Single-pulse 0 100 Pulse width t ( 160 Case temperature T 100 6 TPCA8014-H 1000 P – 120 160 ( C) ° C 2006-11-17 ...

Page 7

... TPCA8014-H 2006-11-17 ...

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