CM800HA-66H_03 MITSUBISHI [Mitsubishi Electric Semiconductor], CM800HA-66H_03 Datasheet - Page 3

• Manufacturer Part Number: CM800HA-66H_03
• Description: HIGH POWER SWITCHING USE INSULATED TYPE
• Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]

HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
PERFORMANCE CURVES
1600
1200
800
400
0
COLLECTOR-EMITTER VOLTAGE V
8
6
4
2
0
8
6
4
2
0
0
0
0
COLLECTOR-EMITTER SATURATION
T
V
V
j
FORWARD CHARACTERISTICS
GE
=25 C
GE
VOLTAGE CHARACTERISTICS
OUTPUT CHARACTERISTICS
V
COLLECTOR CURRENT I
GE
=15V
V
=20V
EMITTER CURRENT I
GE
2
V
=15V
400
400
FREE-WHEEL DIODE
GE
=14V
=13V
( TYPICAL )
( TYPICAL )
( TYPICAL )
4
800
800
6
1200
1200
V
T
T
T
T
E
GE
V
V
V
j
j
V
V
j
j
= 25 C
= 125 C
GE
GE
GE
= 25 C
= 125 C
( A )
GE
GE
C
8
=12V
( A )
=9V
=8V
=7V
=11V
=10V
CE
1600
1600
10
( V )
1600
1200
800
400
10
10
10
10
10
10
0
8
6
4
2
0
7
5
3
2
7
5
3
2
7
5
3
2
COLLECTOR-EMITTER VOLTAGE V
3
2
1
0
0
0
COLLECTOR-EMITTER SATURATION
–1
CAPACITANCE CHARACTERISTICS
V
C
C
V
GATE-EMITTER VOLTAGE V
GATE-EMITTER VOLTAGE V
T
TRANSFER CHARACTERISTICS
GE
ies,
res
CE
VOLTAGE CHARACTERISTICS
j
2 3
= 25 C
=10V
= 0V, T
C
4
4
oes
5 7 10
: f = 100kHz
: f = 1MHz
MITSUBISHI HVIGBT MODULES
HIGH POWER SWITCHING USE
j
= 25 C
( TYPICAL )
( TYPICAL )
( TYPICAL )
0
8
8
2 3 5 7 10
12
12
CM800HA-66H
1
T
T
I
C
I
j
j
I
C
2 3 5 7 10
C
INSULATED TYPE
= 25 C
= 125 C
16
= 1600A
16
= 800A
GE
= 320A
GE
C
C
C
( V )
( V )
ies
oes
res
CE
20
20
( V )
2
Mar. 2003