CM800HA-66H_03 MITSUBISHI [Mitsubishi Electric Semiconductor], CM800HA-66H_03 Datasheet - Page 4

• Manufacturer Part Number: CM800HA-66H_03
• Description: HIGH POWER SWITCHING USE INSULATED TYPE
• Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]

HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
10
10
2.5
2.0
1.5
1.0
0.5
20
16
12
–1
5
3
2
7
5
3
2
7
5
SWITCHING ENERGY CHARACTERISTICS
0
8
4
0
0
SWITCHING TIME CHARACTERISTICS
5
0
0
GATE CHARGE CHARACTERISTICS
V
R
Inductive load
V
I
7 10
CC
C
G
CC
COLLECTOR CURRENT I
= 800A
= 3.75 , Tj = 125 C,
1000
= 1650V, V
200
2
= 1650V
GATE CHARGE Q
2 3
HALF-BRIDGE
CURRENT ( A )
V
R
Inductive load
HALF-BRIDGE
2000
400
CC
( TYPICAL )
G
( TYPICAL )
( TYPICAL )
= 3.75 , T
GE
= 1650V, V
5 7 10
= 15V,
3000
600
t
t
d(off)
d(on)
t
t
r
f
G
3
j
= 125 C
( nC )
GE
4000
800
C
2 3
= 15V
E
E
E
( A )
on
off
rec
1000
5000
5
10
10
10
10
10
10
10
REVERSE RECOVERY CHARACTERISTICS
–1
SWITCHING ENERGY CHARACTERISTICS
–1
–2
5
3
2
7
5
3
2
7
5
8
6
4
2
0
7
5
3
2
7
5
3
2
7
5
3
2
0
1
0
10
0
5
–3
V
V
Inductive load
Single Pulse
T
R
R
V
Inductive load
V
7 10
IMPEDANCE CHARACTERISTICS
C
CC
GE
CC
GE
th(j – c)Q
th(j – c)R
2 3 5 7
= 25 C
= 1650V, I
= 15V, Tj = 125 C,
= 1650V, T
= 15V, R
EMITTER CURRENT I
OF FREE-WHEEL DIODE
2
GATE RESISTANCE ( )
TRANSIENT THERMAL
10
= 0.036K/ W
= 0.018K/ W
2 3
MITSUBISHI HVIGBT MODULES
HIGH POWER SWITCHING USE
HALF-BRIDGE
10
( TYPICAL )
( TYPICAL )
–2
TIME ( s )
G
C
2 3 5 7
j
= 125 C
= 3.75
= 800A,
20
5 7 10
CM800HA-66H
t
I
rr
rr
10
3
–1
30
E
2 3 5 7
INSULATED TYPE
( A )
2 3
E
E
on
off
40
10
5
5
3
2
10
7
5
3
2
10
7
5
0
3
2
Mar. 2003