2SK4020_09 TOSHIBA [Toshiba Semiconductor], 2SK4020_09 Datasheet
2SK4020_09
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2SK4020_09 Summary of contents
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TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π−MOS V) Chopper Regulators, DC-DC Converters and Motor Drive Applications 4-V gate drive Low drain-source ON-resistance: R High forward transfer admittance 100 μA (max) (V Low leakage current: I DSS ...
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Electrical Characteristics Characteristic Gate leakage current Drain cutoff current Drain−source breakdown voltage Gate threshold voltage Drain−source ON-resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time Total gate charge ...
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3 2SK4020 2009-09-29 ...
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4 2SK4020 2009-09-29 ...
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4 2SK4020 1 ⎛ B ⎞ VDSS = ⋅ L ⋅ ⋅ ⎜ ⎟ − ⎝ ⎠ VDSS DD ...
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RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and ...