LH5P860D-80 SHARP [Sharp Electrionic Components], LH5P860D-80 Datasheet - Page 4

• Manufacturer Part Number: LH5P860D-80
• Description: CMOS 512K (64K x 8) Pseudo-Static RAM
• Manufacturer: SHARP [Sharp Electrionic Components]

LH5P860
AC CHARACTERISTICS
NOTES:
1. In order to initialize the circuit, an initialize pause of 100 s with
2. AC characteristics are measured at t
3. AC characteristics are measured at the following condition (see
4. Address is latched at the negative edge of CE
5. Measured with a load equivalent to 2TTL + 100 pF.
6. Data is latched at the positive edge of R/W, at the positive edge
4
Random read, write cycle time
Read modify write cycle time
CE pulse width
CE precharge time
Address setup time
Address hold time
Read command setup time
Read command hold time
CE access time
OE access time
Output enable time from CE
Output enable time from OE
Output enable time from R/W
Output disable time from CE
Output disable time from OE
Output diable time from R/W
OE setup time
OE hold time
Write command pulse width
Write command setup time
Write command hold time
Data setup time from R/W
Data setup time from CE
Data hold time from R/W
Data hold time from CE
Transition time (rise and fall)
Refresh time interval
Refresh command hold time
Auto refresh cycle time
Refresh delay time from CE
Refresh pulse width (Auto refresh)
Refresh precharge time (Auto refresh)
Refresh pulse width (Self refresh)
CE delay time from refresh precharge (Self refresh)
CE
after power-up, followed by at least 8 dummy cycles.
figure at right):
edge of CE
of CE
1
= V
1
, or at the negative edge of CE
IH
, RFSH = V
2
.
PARAMETER
IH
(or CE
2
= V
1, 2, 3
IL
T
, RFSH = V
2
= 5 ns.
.
(T
1
A
or at the positive
= 0 to +70 C, V
IH
) is required
SYMBOL
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
RMW
t
WCS
WCH
DSW
DHW
t
t
RCH
WHZ
OEH
DHC
RHC
t
t
RCS
CEA
OEA
CLZ
OLZ
WLZ
CHZ
OHZ
OES
DSC
REF
t
RFD
FAP
t
FAS
FRS
WP
RC
CE
t
AS
AH
t
FC
FP
P
T
CC
OUTPUT
INPUT
= 5.0 V 10%)
8,000
MIN.
140
205
130
160
80
50
20
20
10
10
30
30
50
30
30
15
50
30
30
0
0
0
0
0
0
0
3
CMOS 512K (64K
Figure 3. AC Characteristics
10,000
8,000
MAX.
80
30
25
25
25
35
8
2.4 V
0.8 V
UNIT
ms
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
8) Pseudo-Static RAM
NOTE
4
4
5
5
6
6
6
6
0.8 V
2.2 V
2.6 V
0.6 V
5P860-12