BSS209PW_06 INFINEON [Infineon Technologies AG], BSS209PW_06 Datasheet - Page 7

• Manufacturer Part Number: BSS209PW_06
• Description: OptiMOS-P Small-Signal-Transistor
• Manufacturer: INFINEON [Infineon Technologies AG]

13 Typ. avalanche energy
E
V
15 Drain-source breakdown voltage
V
AS
DD
(BR)DSS
Rev 1.3
-24.5
-23.5
-22.5
-21.5
-20.5
-19.5
-18.5
mJ
= f (T
-23
-22
-21
-20
-19
-18
2.5
1.5
0.5
= -10 V, R
V
4
3
2
1
0
-60
25
BSS 209PW
j
= f (T
), par.: I
-20
50
GS
j
)
20
D
= 25
= -0.58 A
75
60
100
100
°C
°C
T
T
j
j
180
150
Page 7
14 Typ. gate charge
|V
parameter: I
GS
| = f (Q
V
12
10
9
8
7
6
5
4
3
2
1
0
0
0.2 Vds max
0.5 Vds max
0.8 Vds max
0.5
Gate
D
= -0.58 A pulsed
)
1
1.5
BSS 209PW
2
2006-12-04
nC
|Q Gate |
3