HAT2077R-EL-E RENESAS [Renesas Technology Corp], HAT2077R-EL-E Datasheet - Page 3

• Manufacturer Part Number: HAT2077R-EL-E
• Description: Silicon N Channel MOS FET High Speed Power Switching
• Manufacturer: RENESAS [Renesas Technology Corp]

HAT2077R
Main Characteristics
Rev.2.00 Sep 07, 2005 page 3 of 6
1.0
0.8
0.6
0.4
0.2
20
16
12
4
3
2
1
0
8
4
0
0
Drain to Source Saturation Voltage vs.
0
0
0
Drain to Source Voltage
Gate to Source Voltage
Test Condition:
10 V
Power vs. Temperature Derating
Ambient Temperature
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm), PW ≤ 10 s
Typical Output Characteristics
Gate to Source Voltage
4
4
50
8 V
8
8
100
12
12
V
GS
150
Pulse Test
Pulse Test
Ta (°C)
V
V
I
16
D
= 4.5 V
16
GS
DS
= 3 A
5.5 V
6 V
5 V
2 A
1 A
(V)
(V)
200
20
20
0.001
0.01
0.05
0.02
0.01
100
0.1
Static Drain to Source on State Resistance
0.5
0.2
0.1
10
20
16
12
1
8
4
0
0.1 0.3
0.1 0.2
0
Drain to Source Voltage
Gate to Source Voltage
Ta = 25°C
1 shot Pulse
Operation in
this area is
limited by R
V
Pulse Test
Note 4:
Pulse Test
Typical Transfer Characteristics
V
Maximum Safe Operation Area
DS
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm)
GS
Tc = 75°C
= 10 V
= 10 V, 15 V
Drain Current
2
0.5
1
vs. Drain Current
DS (on)
3
1
4
2
10 30
6
5
–25°C
I
D
25°C
10 µs
100 300
10 20
(A)
V
V
8
GS
DS
(V)
(V)
1000
10
50