HAT2077R-EL-E RENESAS [Renesas Technology Corp], HAT2077R-EL-E Datasheet - Page 5

• Manufacturer Part Number: HAT2077R-EL-E
• Description: Silicon N Channel MOS FET High Speed Power Switching
• Manufacturer: RENESAS [Renesas Technology Corp]

HAT2077R
Rev.2.00 Sep 07, 2005 page 5 of 6
Vin
10 V
20
16
12
Vin Monitor
8
4
0
10 Ω
Switching Time Test Circuit
0
Source to Drain Voltage
5 V
0.0001
0.001
Reverse Drain Current vs.
0.01
10 V
Source to Drain Voltage
0.4
0.1
10
10 µ
1
D = 1
0.5
0.8
D.U.T.
100 µ
V
Normalized Transient Thermal Impedance vs. Pulse Width
GS
1.2
R
= 0 V
L
V
= 100 V
Pulse Test
DS
1 m
Vout
Monitor
V
1.6
SD
(V)
10 m
2.0
Pulse Width PW (S)
100 m
t d(on)
1
Vout
Vin
P
θch – f (t) = γ s (t) • θch – f
θch – f = 83.3°C/W, Ta = 25°C
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm)
DM
5
4
3
2
1
0
–40
10
Switching Time Waveform
10%
10%
Gate to Source Cutoff Voltage
Case Temperature Tc (°C)
PW
90%
T
t r
0
vs. Case Temperature
100
40
D =
t d(off)
1000
I
D
90%
PW
= 10 mA
80
T
0.1 mA
10000
V
90%
DS
1 mA
120
= 10 V
10%
t f
160