UPA1763G NEC [NEC], UPA1763G Datasheet

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UPA1763G

Manufacturer Part Number
UPA1763G
Description
SWITCHING DUAL N-CHANNEL POWER MOS FET INDUSTRIAL USE
Manufacturer
NEC [NEC]
Datasheet
1.UPA1763G.pdf (8 pages)

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Document No.
Date Published
Printed in Japan
ORDERING INFORMATION
ABSOLUTE MAXIMUM RATINGS (T
Remark
DESCRIPTION
designed for DC/DC Converters.
FEATURES
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (pulse)
Total Power Dissipation (1 unit)
Total Power Dissipation (2 unit)
Single Avalanche Current
Single Avalanche Energy
Channel Temperature
Storage Temperature
Notes 1. PW
The PA1763 is N-Channel MOS Field Effect Transistor
Dual chip type
Low on-resistance
R
R
R
Low input capacitance
C
Built-in G-S protection diode
Small and surface mount package (Power SOP8)
DS(on)1
DS(on)2
DS(on)3
iss
= 870 pF TYP.
PART NUMBER
2. T
3. Starting T
G14056EJ1V0DS00 (1st edition)
January 2000 NS CP(K)
= 47.0 m
= 57.0 m
= 66.0 m
PA1763G
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
Exceeding the rated voltage may be applied to this device.
A
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
= 25 °C, Mounted on ceramic substrate of 1200 mm
10 s, Duty cycle
ch
MAX. (V
MAX. (V
MAX. (V
Note1
= 25 °C, R
Note3
Note3
DUAL N-CHANNEL POWER MOS FET
GS
GS
GS
Note2
Note2
= 10 V, I
= 4.5 V, I
= 4.0 V, I
G
= 25
1 %
Power SOP8
PACKAGE
D
A
, V
D
D
The mark
= 2.3 A)
= 25 °C, All terminals are connected.)
= 2.3 A)
= 2.3 A)
INDUSTRIAL USE
I
GS
I
D(pulse)
V
V
D(DC)
E
T
T
I
P
P
DSS
GSS
DATA SHEET
AS
= 20 V
stg
AS
ch
T
T
SWITCHING
–55 to + 150
shows major revised points.
0 V
±4.5
MOS FIELD EFFECT TRANSISTOR
150
±20
±18
1.7
2.0
4.5
60
60
2
x 2.2 mm
mJ
°C
°C
W
W
V
V
A
A
A
PACKAGE DRAWING (Unit : mm)
8
1
5.37 MAX.
0.40
1.27
+0.10
–0.05
0.78 MAX.
5
4
EQUIVALENT CIRCUIT
Gate
Gate
Protection
Diode
0.12 M
(1/2 Circuit)
©
1
2
7, 8 : Drain 1
3
4
5, 6 : Drain 2
0.5 ±0.2
Source
: Source 1
: Gate 1
: Source 2
: Gate 2
Drain
6.0 ±0.3
PA1763
4.4
Body
Diode
0.8
1999, 2000
0.10

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UPA1763G Summary of contents

Page 1

DUAL N-CHANNEL POWER MOS FET DESCRIPTION The PA1763 is N-Channel MOS Field Effect Transistor designed for DC/DC Converters. FEATURES Dual chip type Low on-resistance R = 47.0 m MAX. (V DS(on 57.0 m MAX. (V DS(on)2 GS ...

Page 2

ELECTRICAL CHARACTERISTICS (T CHARACTERISTICS Drain to Source On-state Resistance Gate to Source Cut-off Voltage Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time ...

Page 3

TYPICAL CHARACTERISTICS (T FORWARD TRANSFER CHARACTERISTICS 100 Pulsed 0.1 0.01 0.001 0 1.5 1 1 Gate to Source Voltage - V GS FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT ...

Page 4

DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 100 Pulsed 100 125 150 175 200 T - Channel Temperature - ˚C ch CAPACITANCE vs. ...

Page 5

DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 100 120 140 160 T - Ambient Temperature - ˚C A FORWARD BIAS SAFE OPERATING AREA 100 Mounted on ceramic substrate of ...

Page 6

SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD 100 Starting 4 100 Inductive Load - H 6 120 = ...

Page 7

Data Sheet G14056EJ1V0DS00 PA1763 7 ...

Page 8

The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. No part of this document may be copied or reproduced in any form or by any means ...

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