UPA1911ATE NEC [NEC], UPA1911ATE Datasheet - Page 2

• Manufacturer Part Number: UPA1911ATE
• Description: P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
• Manufacturer: NEC [NEC]

ELECTRICAL CHARACTERISTICS (T
TEST CIRCUIT 1 SWITCHING TIME
2
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate Cut-off Voltage
Forward Transfer Admittance
Drain to Source On-state Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V
0
GS
τ = 1 s
Duty Cycle ≤ 1%
PG.
µ
CHARACTERISTICS
τ
R
G
R
= 10 Ω
G
D.U.T.
R
V
DD
L
I
Wave Form
V
Wave Form
D
GS
SYMBOL
R
R
R
V
V
| y
t
t
I
DS(on)1
DS(on)2
DS(on)3
C
Q
Q
I
C
C
GS(off)
A
d(on)
d(off)
Q
F(S-D)
Q
DSS
GSS
t
t
t
oss
iss
rss
GS
GD
rr
fs
r
f
G
rr
= 25°C)
|
V
I
D
GS
0
0
10%
Data Sheet G15044EJ1V0DS
10%
t
d(on)
V
V
V
V
V
V
V
V
V
f = 1 MHz
V
V
R
V
I
V
I
I
di/dt = 10 A / µ s
D
F
F
DS
GS
DS
DS
GS
GS
GS
DS
GS
DD
GS
G
DD
GS
= 2.5 A, V
= 2.5 A, V
= –2.5 A
= 10 Ω
= –20 V, V
= –10 V, I
= –10 V, I
= –10 V
= –10 V
t
= ±12 V, V
= –4.5 V, I
= –4.0 V, I
= –2.5 V, I
= 0 V
= –10 V, I
= –4.0 V
= –4.0 V
90%
on
t
r
V
TEST CONDITIONS
I
GS(on)
D
t
GS
GS
d(off)
D
D
D
D
D
D
GS
DS
= 0 V
= 0 V
= –1 mA
= –1.5 A
= –1.5 A
= –1.5 A
= –1.5 A
= –1.0 A
t
off
= 0 V
= 0 V
90%
90%
t
f
10%
TEST CIRCUIT 2 GATE CHARGE
PG.
MIN.
–0.5
1
I
G
50 Ω
= 2 mA
TYP.
–1.0
0.84
122
370
110
130
230
470
380
5.4
2.3
1.0
1.0
1.4
82
86
40
14
D.U.T.
MAX.
–1.5
–10
115
120
190
µ µ µ µ PA1911A
10
UNIT
mΩ
mΩ
mΩ
µ A
µ A
pF
pF
pF
nC
nC
nC
nC
ns
ns
ns
ns
ns
V
S
V
R
V
DD
L